Novel Multi-State QDC-QDG FETs and Gate All Around (GAA) FETs for Integrated Logic and QD-NVRAMs

Q4 Engineering
F. Jain, R. Gudlavalleti, J. Chandy, E. Heller
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引用次数: 0

Abstract

This paper presents experimental I-V characteristics of a QDC-QDG FET that exhibited 5-states and has the potential to introduce additional states (e.g. 8) by utilizing Ge QDSL mini-energy sub-bands. Mini-energy bands are formed in an asymmetric Si quantum dot channel (QDC) comprising of two silicon oxide cladded Si quantum dots (QDs), where the upper layer has a smaller core diameter and thicker upper oxide cladding serving as tunnel oxide. Quantum simulations are presented to show more states when additional two germanium oxide cladded Ge dots are added on top of Si QD layers in the gate region. This paper also proposes Gate all around (GAA) FETs, when integrated with nonvolatile random access memories (NVRAMs) that have the potential for wafer scale integration, similar to vertical NANDs. Novel Si and Ge Quantum-dot-based device configurations discussed in this paper open the pathway forward to implement hardware platform for emerging applications using low power consumption and smaller footprint.
用于集成逻辑和qd - nvram的新型多态QDC-QDG场效应管和GAA场效应管
本文介绍了QDC-QDG FET的实验I-V特性,该FET表现出5态,并有可能通过利用Ge QDSL微能子带引入附加态(例如8态)。在由两个氧化硅包覆的硅量子点(QD)组成的不对称硅量子点沟道(QDC)中形成迷你能带,其中上层具有较小的芯直径和用作隧道氧化物的较厚的上氧化物包覆层。量子模拟显示了当在栅极区域的Si QD层顶部添加额外的两个锗氧化物包覆的Ge点时的更多状态。本文还提出了当与非易失性随机存取存储器(NVRAM)集成时,与垂直NAND类似,具有晶圆级集成潜力的栅极环绕(GAA)FET。本文讨论的新型硅和锗量子点器件配置为使用低功耗和更小的占地面积实现新兴应用的硬件平台开辟了道路。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
International Journal of High Speed Electronics and Systems
International Journal of High Speed Electronics and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.60
自引率
0.00%
发文量
22
期刊介绍: Launched in 1990, the International Journal of High Speed Electronics and Systems (IJHSES) has served graduate students and those in R&D, managerial and marketing positions by giving state-of-the-art data, and the latest research trends. Its main charter is to promote engineering education by advancing interdisciplinary science between electronics and systems and to explore high speed technology in photonics and electronics. IJHSES, a quarterly journal, continues to feature a broad coverage of topics relating to high speed or high performance devices, circuits and systems.
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