Influence of bath temperature and deposition time on hardness and magnetisation of electrodeposited Nickel Manganese Tungsten thin films

IF 1 4区 材料科学
P. Kirthika, N. Thangaraj, P. Anitha
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引用次数: 0

Abstract

The Nickel Manganese Tungsten (Ni-Mn-W) thin films were prepared at different temperature and time of deposition on copper substrate. The crystal structure and morphology of deposits were analysed by X-ray diffraction (XRD) and scanning electron microscopy (SEM). The XRD revealed that the structure of Ni-Mn-W thin films with have an average grain size of about 28 nm for 45o C. The elemental analysis of Ni-Mn-W thin films were obtained by energy dispersive X-ray spectroscopy (EDAX). The magnetic properties of electrodeposited Ni-Mn-W thin films were obtained by vibrating sample magnetometer (VSM). The magnetic parameters of Ni-Mn-W films such as coercivity and saturation magnetization were decreased with increasing of grain size. The hardness of the films was studies by Vicker Hardness tester through diamond intender method.
镀液温度和沉积时间对电沉积镍锰钨薄膜硬度和磁化性能的影响
在不同温度和时间下,在铜衬底上制备了镍锰钨(Ni-Mn-W)薄膜。采用x射线衍射仪(XRD)和扫描电镜(SEM)分析了镀层的晶体结构和形貌。XRD分析表明,在45℃时,Ni-Mn-W薄膜的平均晶粒尺寸约为28 nm。利用能量色散x射线能谱(EDAX)对Ni-Mn-W薄膜进行元素分析。用振动样品磁强计(VSM)测定了电沉积Ni-Mn-W薄膜的磁性能。Ni-Mn-W薄膜的矫顽力、饱和磁化强度等磁性参数随晶粒尺寸的增大而减小。用维氏硬度计对膜的硬度进行了测定。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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