Electrothermal Analyses of Bandpass NGD RLC-Network Topologies

Abstract

This paper develops an original study of temperature effect on the unfamiliar bandpass (BP) negative group delay (NGD) lumped passive circuits. The paper presents the first study of electrothermal analysis of electronic circuits classified as BP-NGD topologies. The considered BP-NGD passive cells are mainly constituted by RLC-resonant networks. The equivalence between two basic BP-NGD topologies constituted by RLC-series and RLC-parallel networks is elaborated via the voltage transfer function (VTF) analogy. Then, the theoretical demonstrations are introduced to define the main specifications as the NGD center frequency, NGD value, attenuation and NGD bandwidth. The electrothermal innovative study is developed based on the temperature coefficient resistor (TCR) of elements constituting the BP-NGD circuits. With proofs of concept of RLC-series and RLC-parallel circuits operating with -500 ns NGD value at 13.56 MHz, calculated and simulated results showing are in excellent agreement. The sensitivity analyses of BP-NGD specifications in function of ambient temperature variation from 0°C to 100°C are investigated. The BP-NGD response variations versus frequency and temperature are characterized with thermo-frequency cartographies and discussed.