A 1.2GHz Frequency Range, 153.4 dBc/Hz FoM, low Phase Noise, Current Starved Multi-Path Ring VCO

Q4 Engineering
Mohd Ziauddin Jahangir, C. Paidimarry
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引用次数: 0

Abstract

This article describes the design of a low power, low phase noise, multi-Path ring VCO (MPRVCO) in 90nm CMOS process. The proposed oscillator achieves a tuning range of 1.2GHz operating at 1.65 GHz center frequency, with reduced phase noise of -87.3dBc/Hz at 1MHz offset. The proposed MPRVCO achieves a FoM of 153.4dBc/Hz, consuming 0.657mW power at 1.65GHz frequency. The proposed VCO utilizes Current starving technique for frequency variation. Sub-threshold transistor is used to obtain monotonic and linear frequency tuning characteristics. The proposed VCO is one of the very few Current Starved ring VCOs capable of producing such low phase noise in 90nm CMOS process while operating in GHz frequency range
一个1.2GHz频率范围,153.4 dBc/Hz FoM,低相位噪声,缺流多径环形压控振荡器
本文介绍了一种采用90nm CMOS工艺的低功耗、低相位噪声、多路环形VCO(MPRVCO)的设计。所提出的振荡器在1.65GHz的中心频率下实现了1.2GHz的调谐范围,在1MHz的偏移下降低了-87.3dBc/Hz的相位噪声。所提出的MPRVCO实现了153.4dBc/Hz的FoM,在1.65GHz频率下消耗0.657mW的功率。所提出的VCO利用电流饥饿技术进行频率变化。亚阈值晶体管用于获得单调和线性的频率调谐特性。所提出的VCO是极少数能够在90nm CMOS工艺中在GHz频率范围内工作时产生如此低相位噪声的电流饥饿环形VCO之一
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Journal of Integrated Circuits and Systems
Journal of Integrated Circuits and Systems Engineering-Electrical and Electronic Engineering
CiteScore
0.90
自引率
0.00%
发文量
39
期刊介绍: This journal will present state-of-art papers on Integrated Circuits and Systems. It is an effort of both Brazilian Microelectronics Society - SBMicro and Brazilian Computer Society - SBC to create a new scientific journal covering Process and Materials, Device and Characterization, Design, Test and CAD of Integrated Circuits and Systems. The Journal of Integrated Circuits and Systems is published through Special Issues on subjects to be defined by the Editorial Board. Special issues will publish selected papers from both Brazilian Societies annual conferences, SBCCI - Symposium on Integrated Circuits and Systems and SBMicro - Symposium on Microelectronics Technology and Devices.
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