Simple ultrasonic-assisted clean graphene transfer

Q1 Engineering

Journal of Electronic Science and Technology Pub Date : 2022-09-01 DOI:10.1016/j.jnlest.2022.100168

Zhuo-Cheng Zhang , Xiao-Qiu-Yan Zhang , Min Hu

引用次数: 1

Abstract

Clean graphene transfer has received widespread research attention, where most methods are focused on cleaning the upper surface of graphene to improve the transfer technique. However, the residue formation on the bottom surface of graphene is also inevitable; therefore, cleaning the bottom surface is crucial. In this study, we proposed an improved graphene wet transfer method using an ultrasonic processing (UP) step for etching copper (Cu). Using this method, the bottom surface can be cleaned efficiently. The results of atomic force microscopy (AFM) and Raman spectroscopy mapping revealed that the graphene films transferred with UP had smoother and cleaner surfaces, less contamination, and higher quality than those transferred without UP.

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简单的超声波辅助清洁石墨烯转移

清洁石墨烯转移已经受到了广泛的研究关注，大多数方法都集中在清洁石墨烯的上表面来改进转移技术。然而，石墨烯底表面的残留物形成也是不可避免的;因此，清洁底面是至关重要的。在这项研究中，我们提出了一种改进的石墨烯湿转移方法，使用超声波加工(UP)步骤蚀刻铜(Cu)。使用该方法，可以有效地清洗底面。原子力显微镜(AFM)和拉曼光谱成像的结果表明，与没有UP转移的石墨烯膜相比，UP转移的石墨烯膜表面更光滑，更清洁，污染更少，质量更高。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Journal of Electronic Science and Technology Engineering-Electrical and Electronic Engineering

CiteScore

4.30

自引率

0.00%

发文量

1362

审稿时长

99 days

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