A Proposed Non-Aligned Double Gate Junction FET Device and its Performance Improvement using High-k Gate Oxide Material

IF 1 4区材料科学 Q4 MATERIALS SCIENCE, MULTIDISCIPLINARY

Nano Pub Date : 2023-04-26 DOI:10.1142/s1793292023500406

A. K. Sinha, B. Naik

引用次数: 0

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一种非对准双栅结FET器件及其高k栅氧化物材料的性能改进

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Nano 工程技术-材料科学：综合

CiteScore

2.10

自引率

0.00%

发文量

审稿时长

1.6 months

期刊介绍： NANO is an international peer-reviewed monthly journal for nanoscience and nanotechnology that presents forefront fundamental research and new emerging topics. It features timely scientific reports of new results and technical breakthroughs and also contains interesting review articles about recent hot issues. NANO provides an ideal forum for presenting original reports of theoretical and experimental nanoscience and nanotechnology research. Research areas of interest include: nanomaterials including nano-related biomaterials, new phenomena and newly developed characterization tools, fabrication methods including by self-assembly, device applications, and numerical simulation, modeling, and theory. However, in light of the current stage development of nanoscience, manuscripts on numerical simulation, modeling, and/or theory only without experimental evidences are considered as not pertinent to the scope of NANO.