Nitrogen doped ZrO2 thin films: synthesis and characterization

IF 1 4区 材料科学
V. Ciupină, M. Albu, A. Caraiane, C. Porosnicu, C. Staicu, V. Nicolescu, R. Manu
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引用次数: 0

Abstract

To obtain ZrO2 and ZrO2+N2 thin films was used magnetron sputtering in radio frequency mode in a 10-6 mbar high vacuum deposition chamber. Silicon and carbon substrates measuring 12x15mm were used for deposition. The used magnetron system was composed of a single water-cooled cathode, provided with one circular targets of ZrO2 (2 mm thick and 50 mm in diameter) of high purity (99.95%). TDS Analysis of the films was performed. The desorbed species were observed with a QMG 220 Mass spectrometer provided with a W filament. It can be observed that in the case of the ZnO2 film, nitrogen desorption registers two maxima with signal intensity of 9.7x10-12 and 9.0x10-12, reached after 2000s and 4900s respectively. In the case of ZrO2+N2 film, nitrogen desorption shows a pronounced maximum with a signal intensity of 2.4x10-11 reached after 6000s. . The topology the ZrO2 and ZrO2+N2 samples deposited on Si substrates have been investigated by scanning electron microscopy (SEM) using a FEI Inspect S scanning electron microscope ( Hillsboro, Oregon, OR, USA) in high-vacuum modes. For the ZrO2 deposition, the surface appears to have grain-like topology, with a mean dimension of around 150 nm. These structures do not appear for the ZrO2+N2 deposition. Instead, for the ZrO2+N2 sample, small blisters (between 300 nm and 1.000nm) have formed on the surface, as a consequence of injecting N2 during the deposition. Cross-section measurements were also performed to establish the layer thickness. The ZrO2 sample has a measured thickness of 1950nm, while the introduction of N2 gas for the ZrO2+N2 sample had a poisoning effect on the magnetron target that led to a decrease (5 times) in deposition rate, giving this sample a final thickness of 365nm (compared to 1950nm) for the same deposition The crystalline structure was investigated using X-Ray Diffraction (XRD) method. The experimental set-up was composed of a diffractometer equipped with a Cu-Kα X-ray sourse, with a specific wavelength of 0.154nm, in a Bragg-Bretano type geometry. In this way, a crystalline phase corresponding to ZrO2 with a group symmetry Fm-3m (225)-face centered cubic was identified. At the same time, it is observed that the films deposited in the reactive atmosphere show a pronounced amorphization, this most likely being due to the retention of nitrogen which leads to the modification of the network parameters.
氮掺杂ZrO2薄膜:合成与表征
在10-6 mbar的高真空沉积室中,采用射频磁控溅射法制备ZrO2和ZrO2+N2薄膜。采用12x15mm的硅和碳衬底进行沉积。所使用的磁控管系统由单个水冷阴极组成,提供一个高纯度(99.95%)的ZrO2圆形靶(2 mm厚,直径50 mm)。对薄膜进行TDS分析。解吸物质用带W灯丝的qmg220质谱仪进行观察。可以观察到,对于ZnO2膜,氮的脱附有两个最大值,分别在2000和4900s后达到9.7 × 10-12和9.0 × 10-12。在ZrO2+N2膜中,氮的脱附表现出明显的最大值,6000s后信号强度达到2.4 × 10-11。利用FEI Inspect S扫描电镜(Hillsboro, Oregon, OR, USA)在高真空模式下研究了沉积在Si衬底上的ZrO2和ZrO2+N2样品的拓扑结构。对于ZrO2沉积,表面呈现出晶粒状拓扑结构,平均尺寸约为150 nm。这些结构在ZrO2+N2沉积中没有出现。相反,对于ZrO2+N2样品,由于在沉积过程中注入N2,表面上形成了小水泡(在300 nm到1000 nm之间)。还进行了截面测量以确定层厚度。ZrO2样品的测量厚度为1950nm,而ZrO2+N2样品的引入对磁控管靶产生了中毒效应,导致沉积速率降低(5倍),使该样品在相同沉积条件下的最终厚度为365nm(与1950nm相比)。实验装置由配备cu - k - α x射线源的衍射仪组成,特定波长为0.154nm,具有Bragg-Bretano型几何形状。通过这种方法,确定了一种与ZrO2相对应的具有群对称的Fm-3m(225)面心立方的晶相。同时,我们观察到沉积在反应气氛中的薄膜表现出明显的非晶化,这很可能是由于氮的保留导致了网络参数的改变。
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来源期刊
Journal of Ovonic Research
Journal of Ovonic Research Materials Science-Electronic, Optical and Magnetic Materials
CiteScore
1.60
自引率
20.00%
发文量
77
期刊介绍: Journal of Ovonic Research (JOR) appears with six issues per year and is open to the reviews, papers, short communications and breakings news inserted as Short Notes, in the field of ovonic (mainly chalcogenide) materials for memories, smart materials based on ovonic materials (combinations of various elements including chalcogenides), materials with nano-structures based on various alloys, as well as semiconducting materials and alloys based on amorphous silicon, germanium, carbon in their various nanostructured forms, either simple or doped/alloyed with hydrogen, fluorine, chlorine and other elements of high interest for applications in electronics and optoelectronics. Papers on minerals with possible applications in electronics and optoelectronics are encouraged.
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