Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity

IF 31.6 1区 材料科学 Q1 MATERIALS SCIENCE, MULTIDISCIPLINARY
Tao Yang, Yan-Hui Chen, Ya-Chao Wang, Wei Ou, Lei-Ying Ying, Yang Mei, Ai-Qin Tian, Jian-Ping Liu, Hao-Chung Guo, Bao-Ping Zhang
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引用次数: 0

Abstract

Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm−2, the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the δ-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (~ 4.0 λ) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.

Abstract Image

Abstract Image

Abstract Image

基于InGaN量子点和短腔的绿色垂直腔面发射激光器。
在连续波(CW)工作条件下,演示了绿色GaN基垂直腔面发射激光器(VCSEL)的室温低阈值激光发射。通过使用自形成的InGaN量子点(QDs)作为有源区,在524.0nm发射的VCSEL具有51.97A cm-2的阈值电流密度,这是有史以来最低的。QD外延片具有69.94%的高IQE和类似δ函数的态密度,在实现低阈值电流方面起着重要作用。此外,设备的一个短空腔(~ 4.0λ)对于将自发发射耦合因子提高到0.094、增加增益系数因子和降低光学损耗至关重要。为了提高散热性能,采用AlN层作为电流限制层,用电镀铜板代替金属键合。研究结果为实现高性能GaN基VCSEL提供了重要指导。
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来源期刊
Nano-Micro Letters
Nano-Micro Letters NANOSCIENCE & NANOTECHNOLOGY-MATERIALS SCIENCE, MULTIDISCIPLINARY
CiteScore
42.40
自引率
4.90%
发文量
715
审稿时长
13 weeks
期刊介绍: Nano-Micro Letters is a peer-reviewed, international, interdisciplinary and open-access journal that focus on science, experiments, engineering, technologies and applications of nano- or microscale structure and system in physics, chemistry, biology, material science, pharmacy and their expanding interfaces with at least one dimension ranging from a few sub-nanometers to a few hundreds of micrometers. Especially, emphasize the bottom-up approach in the length scale from nano to micro since the key for nanotechnology to reach industrial applications is to assemble, to modify, and to control nanostructure in micro scale. The aim is to provide a publishing platform crossing the boundaries, from nano to micro, and from science to technologies.
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