Tao Yang, Yan-Hui Chen, Ya-Chao Wang, Wei Ou, Lei-Ying Ying, Yang Mei, Ai-Qin Tian, Jian-Ping Liu, Hao-Chung Guo, Bao-Ping Zhang
{"title":"Green Vertical-Cavity Surface-Emitting Lasers Based on InGaN Quantum Dots and Short Cavity","authors":"Tao Yang, Yan-Hui Chen, Ya-Chao Wang, Wei Ou, Lei-Ying Ying, Yang Mei, Ai-Qin Tian, Jian-Ping Liu, Hao-Chung Guo, Bao-Ping Zhang","doi":"10.1007/s40820-023-01189-0","DOIUrl":null,"url":null,"abstract":"<div><p>Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm<sup>−2</sup>, the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the δ-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (~ 4.0 λ) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.</p>\n<div><figure><div><div><picture><source><img></source></picture></div></div></figure></div></div>","PeriodicalId":48779,"journal":{"name":"Nano-Micro Letters","volume":"15 1","pages":""},"PeriodicalIF":31.6000,"publicationDate":"2023-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10562330/pdf/","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Nano-Micro Letters","FirstCategoryId":"88","ListUrlMain":"https://link.springer.com/article/10.1007/s40820-023-01189-0","RegionNum":1,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
Room temperature low threshold lasing of green GaN-based vertical cavity surface emitting laser (VCSEL) was demonstrated under continuous wave (CW) operation. By using self-formed InGaN quantum dots (QDs) as the active region, the VCSEL emitting at 524.0 nm has a threshold current density of 51.97 A cm−2, the lowest ever reported. The QD epitaxial wafer featured with a high IQE of 69.94% and the δ-function-like density of states plays an important role in achieving low threshold current. Besides, a short cavity of the device (~ 4.0 λ) is vital to enhance the spontaneous emission coupling factor to 0.094, increase the gain coefficient factor, and decrease the optical loss. To improve heat dissipation, AlN layer was used as the current confinement layer and electroplated copper plate was used to replace metal bonding. The results provide important guidance to achieving high performance GaN-based VCSELs.
期刊介绍:
Nano-Micro Letters is a peer-reviewed, international, interdisciplinary and open-access journal that focus on science, experiments, engineering, technologies and applications of nano- or microscale structure and system in physics, chemistry, biology, material science, pharmacy and their expanding interfaces with at least one dimension ranging from a few sub-nanometers to a few hundreds of micrometers. Especially, emphasize the bottom-up approach in the length scale from nano to micro since the key for nanotechnology to reach industrial applications is to assemble, to modify, and to control nanostructure in micro scale. The aim is to provide a publishing platform crossing the boundaries, from nano to micro, and from science to technologies.