Conformations of voltage-sensing domain III differentially define NaV channel closed- and open-state inactivation.

The Journal of General Physiology Pub Date : 2021-09-06 Epub Date: 2021-08-04 DOI:10.1085/jgp.202112891
Paweorn Angsutararux, Po Wei Kang, Wandi Zhu, Jonathan R Silva
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引用次数: 6

Abstract

Voltage-gated Na+ (NaV) channels underlie the initiation and propagation of action potentials (APs). Rapid inactivation after NaV channel opening, known as open-state inactivation, plays a critical role in limiting the AP duration. However, NaV channel inactivation can also occur before opening, namely closed-state inactivation, to tune the cellular excitability. The voltage-sensing domain (VSD) within repeat IV (VSD-IV) of the pseudotetrameric NaV channel α-subunit is known to be a critical regulator of NaV channel inactivation. Yet, the two processes of open- and closed-state inactivation predominate at different voltage ranges and feature distinct kinetics. How inactivation occurs over these different ranges to give rise to the complexity of NaV channel dynamics is unclear. Past functional studies and recent cryo-electron microscopy structures, however, reveal significant inactivation regulation from other NaV channel components. In this Hypothesis paper, we propose that the VSD of NaV repeat III (VSD-III), together with VSD-IV, orchestrates the inactivation-state occupancy of NaV channels by modulating the affinity of the intracellular binding site of the IFMT motif on the III-IV linker. We review and outline substantial evidence that VSD-III activates in two distinct steps, with the intermediate and fully activated conformation regulating closed- and open-state inactivation state occupancy by altering the formation and affinity of the IFMT crevice. A role of VSD-III in determining inactivation-state occupancy and recovery from inactivation suggests a regulatory mechanism for the state-dependent block by small-molecule anti-arrhythmic and anesthetic therapies.

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电压感应域III的构象不同地定义了NaV通道的闭合和打开状态失活。
电压门控Na+ (NaV)通道是动作电位(APs)的起始和传播的基础。NaV通道打开后的快速失活,称为开放状态失活,在限制AP持续时间方面起着关键作用。然而,NaV通道失活也可能发生在打开之前,即闭合状态失活,以调节细胞的兴奋性。伪四聚体NaV通道α-亚基重复序列IV (VSD-IV)内的电压感应域(VSD)是NaV通道失活的关键调节因子。然而,在不同的电压范围内,两种失活过程占主导地位,并具有不同的动力学特征。失活是如何在这些不同的范围内发生,从而导致NaV通道动力学的复杂性尚不清楚。然而,过去的功能研究和最近的低温电镜结构揭示了其他NaV通道组分对其失活的重要调控。在这篇假设论文中,我们提出NaV repeat III的VSD (VSD-III)与VSD- iv一起,通过调节IFMT基序在III- iv连接体上的细胞内结合位点的亲和力来协调NaV通道的失活状态占用。我们回顾并概述了大量证据表明VSD-III的激活分为两个不同的步骤,中间和完全激活的构象通过改变IFMT缝隙的形成和亲和力来调节关闭和开放状态的失活状态占用。VSD-III在决定失活状态的占用和失活后的恢复中的作用提示了小分子抗心律失常和麻醉治疗对状态依赖性阻滞的调节机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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