Structural transformations in the low-temperature grown GaAs with superlattices of Sb and P δ-layers.

IF 1.9 3区化学

Acta Crystallographica Section B-structural Science Pub Date : 2013-02-01 Epub Date: 2013-01-19 DOI:10.1107/S0108768113000189

M V Baidakova, N A Bert, V V Chaldyshev, V N Nevedomsky, M A Yagovkina, V V Preobrazhenskii, M A Putyato, B R Semyagin

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引用次数: 6

Abstract

The structure of low-temperature grown GaAs with equidistant δ-layers of Sb and P was studied by analysis of the X-ray curves, which was supported by optical absorption measurements and transmission electron microscopy. The simultaneous fitting of the X-ray reflectivity curve and diffraction ones for GaAs (004) and GaAs (115) crystallographic planes provided reliable information about the period of δ-layer superlattice, thickness of the Sb and P δ-layers, and amount of excess As. Variation of these parameters was documented when excess As precipitated into As nanoinclusions upon annealing. The Sb and P δ-layers impact differently on the As precipitation processes in low-temperature grown GaAs. The combination of Sb and P δ-layers appears to be an effective tool for spatial patterning of the nanoinclusion array and prevention of the defect formation under annealing.

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具有Sb和P δ层超晶格的低温生长GaAs的结构转变。

通过x射线曲线分析、光学吸收测量和透射电镜分析，研究了Sb和P等距δ层低温生长GaAs的结构。同时拟合GaAs(004)和GaAs(115)晶体平面的x射线反射率曲线和衍射曲线，提供了δ层超晶格周期、Sb和P δ层厚度以及过量As数量的可靠信息。当过量的砷在退火时析出成砷纳米夹杂物时，记录了这些参数的变化。Sb和P δ-层对低温生长GaAs中As析出过程的影响不同。Sb和P δ-层的结合是纳米包合物阵列空间图化和防止退火缺陷形成的有效工具。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Acta Crystallographica Section B-structural Science 化学-晶体学

自引率

5.30%

发文量

审稿时长

6-12 weeks

期刊介绍： Acta Crystallographica Section B: Structural Science, Crystal Engineering and Materials publishes scientific articles related to the structural science of compounds and materials in the widest sense. Knowledge of the arrangements of atoms, including their temporal variations and dependencies on temperature and pressure, is often the key to understanding physical and chemical phenomena and is crucial for the design of new materials and supramolecular devices. Acta Crystallographica B is the forum for the publication of such contributions. Scientific developments based on experimental studies as well as those based on theoretical approaches, including crystal-structure prediction, structure-property relations and the use of databases of crystal structures, are published.