Micro Photo Detector Fabricated of Ferroelectric-Metal Heterostructure.

A Zomorrodian, N J Wu, Y Song, S Stahl, A Ignatiev, E Brady Trexler, C A Garcia
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引用次数: 11

Abstract

The anomalous photovoltaic effect (APE) in ferroelectric thin films has been utilized for the development of an optical micro-detector active in the visible range (from 350 to 800 nm). La-doped Pb(Zr,Ti)O(3) (PLZT) ferroelectric films epitaxially grown on Pt(001)/Mg(001) substrate were fabricated into micro-detector arrays and characterized as to their optical response. The Au/PLZT/Pt/MgO device was self-polarized in the as-deposited form with the polarization vector perpendicular to film surface. The heterostructure photovoltage response ranged from 100 to 200 mV, and the photocurrent was ~30 nA/cm(2) for devices of ~250 μm diameter under illumination of 100 mW/cm(2) at wavelengths from 400 to 580 nm. Such micro-detectors can be used for optical sensors in MEMS devices as well as for electrical stimulators of biological cells.

制备铁电-金属异质结构微光探测器。
利用铁电薄膜中的反常光伏效应(APE),研制了一种可见光范围(350 ~ 800 nm)的光学微探测器。在Pt(001)/Mg(001)衬底上外延生长la掺杂Pb(Zr,Ti)O(3) (PLZT)铁电薄膜,制备了微探测器阵列,并对其光学响应进行了表征。Au/PLZT/Pt/MgO器件以沉积态自极化,极化矢量垂直于薄膜表面。在400 ~ 580 nm波长、100 mW/cm(2)光照条件下,直径~250 μm器件的异质结构光电压响应范围为100 ~ 200 mV,光电流为~30 nA/cm(2)。这种微型探测器可用于MEMS器件中的光学传感器以及生物细胞的电刺激器。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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