Interface scaling in the contact process

Dickman, Munoz
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引用次数: 21

Abstract

A correspondence between lattice models with absorbing states and models of pinned interfaces in random media can be established by defining local height variables h(x,t) as integrals of the activity at point x up to time t. Within this context we study the interface representation of a prototypical model with absorbing states, the contact process, in dimensions 1-3. Simulations confirm the scaling relation beta(W)=1-straight theta between the interface-width growth exponent beta(W) and the exponent straight theta governing the decay of the order parameter. A scaling property of the height distribution, which serves as the basis for this relation, is also verified. The height-height correlation function shows clear signs of anomalous scaling, in accord with Lopez' analysis [Phys. Rev. Lett. 83, 4594 (1999)], but no evidence of multiscaling.

接触过程中的界面缩放
通过将局部高度变量h(x,t)定义为x点到时间t的活度积分,可以建立具有吸收状态的晶格模型和随机介质中固定界面模型之间的对应关系。在此背景下,我们研究了1-3维中具有吸收状态的原型模型的界面表示,即接触过程。模拟结果证实了界面宽度增长指数β (W)与控制阶参量衰减的指数直θ之间的标度关系β (W)=1-直θ。还验证了高度分布的标度特性,该特性是建立这一关系的基础。高度-高度相关函数显示出明显的异常标度迹象,与Lopez的分析一致[Phys。[j],但没有证据表明多尺度。
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