Effect of gas composition on spore mortality and etching during low-pressure plasma sterilization.

S Lerouge, M R Wertheimer, R Marchand, M Tabrizian, L Yahia
{"title":"Effect of gas composition on spore mortality and etching during low-pressure plasma sterilization.","authors":"S Lerouge,&nbsp;M R Wertheimer,&nbsp;R Marchand,&nbsp;M Tabrizian,&nbsp;L Yahia","doi":"10.1002/(sici)1097-4636(200007)51:1<128::aid-jbm17>3.0.co;2-#","DOIUrl":null,"url":null,"abstract":"<p><p>The aim of this work was to investigate possible mechanisms of sterilization by low-temperature gas plasma: spore destruction by plasma is compared with etching of synthetic polymers. Bacillus subtilis spores were inoculated at the bottom of glass vials and subjected to different plasma gas compositions (O(2), O(2)/Ar, O(2)/H(2), CO(2), and O(2)/CF(4)), all known to etch polymers. O(2)/CF(4) plasma exhibited much higher efficacy than all other gases or gas mixtures tested, with a more than 5 log decrease in 7.5 min, compared with a 2 log decrease with pure oxygen. Examination by scanning electron microscopy showed that spores were significantly etched after 30 min of plasma exposure, but not completely. We speculate about their etch resistance compared with that of synthetic polymers on the basis of their morphology and complex coating structure. In contrast to so-called in-house plasma, sterilization by Sterrad(R) tended to increase the observed spores' size; chemical modification (oxidation), rather than etching, is believed to be the sterilization mechanism of Sterrad(R).</p>","PeriodicalId":15159,"journal":{"name":"Journal of biomedical materials research","volume":"51 1","pages":"128-35"},"PeriodicalIF":0.0000,"publicationDate":"2000-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"166","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of biomedical materials research","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1002/(sici)1097-4636(200007)51:1<128::aid-jbm17>3.0.co;2-#","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 166

Abstract

The aim of this work was to investigate possible mechanisms of sterilization by low-temperature gas plasma: spore destruction by plasma is compared with etching of synthetic polymers. Bacillus subtilis spores were inoculated at the bottom of glass vials and subjected to different plasma gas compositions (O(2), O(2)/Ar, O(2)/H(2), CO(2), and O(2)/CF(4)), all known to etch polymers. O(2)/CF(4) plasma exhibited much higher efficacy than all other gases or gas mixtures tested, with a more than 5 log decrease in 7.5 min, compared with a 2 log decrease with pure oxygen. Examination by scanning electron microscopy showed that spores were significantly etched after 30 min of plasma exposure, but not completely. We speculate about their etch resistance compared with that of synthetic polymers on the basis of their morphology and complex coating structure. In contrast to so-called in-house plasma, sterilization by Sterrad(R) tended to increase the observed spores' size; chemical modification (oxidation), rather than etching, is believed to be the sterilization mechanism of Sterrad(R).

低压等离子体灭菌过程中气体成分对孢子死亡率和腐蚀的影响。
这项工作的目的是研究低温气体等离子体灭菌的可能机制:等离子体破坏孢子与合成聚合物的蚀刻进行了比较。将枯草芽孢杆菌孢子接种于玻璃瓶底部,并接受不同的等离子体气体成分(O(2), O(2)/Ar, O(2)/H(2), CO(2)和O(2)/CF(4)),所有这些都已知会腐蚀聚合物。O(2)/CF(4)等离子体表现出比所有其他气体或气体混合物更高的效率,在7.5分钟内降低了5倍以上,而纯氧降低了2倍。扫描电镜检查显示,暴露于等离子体30分钟后,孢子明显蚀刻,但不完全蚀刻。我们根据其形态和复杂的涂层结构推测其与合成聚合物的耐蚀性。与所谓的内部等离子体相比,Sterrad(R)灭菌倾向于增加观察到的孢子的大小;化学修饰(氧化),而不是蚀刻,被认为是Sterrad(R)的杀菌机制。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
自引率
0.00%
发文量
0
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术官方微信