Unveiling Strong Electron Correlations and Charge Density Wave Instability in NbTe2 Induced by Sn Incorporation

IF 3.4 3区 化学 Q2 CHEMISTRY, PHYSICAL
I. S. Eid,Zia Ur Rehman,Zongyi Wang,Muhammad Waqas,Zhanfeng Liu,Tongrui Li,Zhe Sun,Li Song
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Abstract

The interplay between charge density waves (CDWs) and electron correlations in transition metal dichalcogenides (TMDs) remains a subject of intense debate. NbTe2 is a unique member of this family, exhibiting a significant structural distortion and a high-temperature CDW transition (∼550 K). However, this comparably high transition temperature has obscured the direct spectroscopic observation of the electronic structure evolution across the phase boundary since long, hindering a microscopic understanding on the CDW mechanism. Here, we have successfully overcome this limitation by synthesizing Sn0.01NbTe2 single crystals, which effectively suppress the CDW transition temperature to 254 K. This suppression allows us to utilize angle-resolved photoemission spectroscopy (ARPES) to directly visualize the momentum-space band structure reconstruction accompanying the suppressed phase transition, which is identified by transport measurements and is consistent with the known 3 × 1 structural distortion of the NbTe2 system. Crucially, by comparing our ARPES data with first-principles calculations that account for effects of Sn incorporation, we identify a chemical potential shift induced by the incorporation. This subtle electronic tuning, accompanied by incorporation, effectively modifies the Fermi surface topology and suppresses the CDW transition temperature from ∼550 to 254 K. This shift moves the Fermi level into the high density of states (DOS) region of the monoclinic phase, thereby disrupting the energy-saving conditions of the distorted lattice and explaining the suppression of the transition temperature. Our findings provide evidence for substantial deviations from the DFT description of the electronic structure, while the microscopic origin of these deviations remains to be determined.

Abstract Image

揭示Sn掺入引起的NbTe2中强电子相关性和电荷密度波不稳定性
过渡金属二硫族化合物(TMDs)中电荷密度波(CDWs)和电子相关性之间的相互作用仍然是一个激烈争论的主题。NbTe2是该家族的独特成员,表现出明显的结构畸变和高温CDW转变(~ 550 K)。然而,这种较高的转变温度长期以来模糊了对电子结构跨相边界演变的直接光谱观察,阻碍了对CDW机理的微观理解。本文通过合成Sn0.01NbTe2单晶成功地克服了这一限制,有效地抑制了CDW转变温度至254 K。这种抑制使我们能够利用角分辨光发射光谱(ARPES)直接可视化伴随抑制相变的动量空间带结构重建,这是通过输运测量确定的,并且与已知的NbTe2系统的3 × 1结构畸变一致。至关重要的是,通过将我们的ARPES数据与解释Sn掺入效应的第一性原理计算进行比较,我们确定了由掺入引起的化学势位移。这种微妙的电子调谐,伴随着合并,有效地改变了费米表面拓扑结构,并抑制了CDW从~ 550到254 K的转变温度。这种转移将费米能级移动到单斜相的高密度态(DOS)区域,从而破坏了扭曲晶格的节能条件,并解释了转变温度的抑制。我们的发现为电子结构的DFT描述的实质性偏差提供了证据,而这些偏差的微观起源仍有待确定。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
The Journal of Physical Chemistry C
The Journal of Physical Chemistry C 化学-材料科学:综合
CiteScore
6.50
自引率
8.10%
发文量
2047
审稿时长
1.8 months
期刊介绍: The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.
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