Monte Carlo Analysis of Ga2O3 Damage from Alpha Particle Radiation

IF 0.8 4区 物理与天体物理 Q4 PHYSICS, APPLIED
Daotian Shi, Chuanyang Liu, Qing Sun, Jingjing Liu, Xinjiang Wang, Huakui Hu
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引用次数: 0

Abstract

In this study, we used the Monte Carlo method to simulate the interaction of alpha particles with Ga2O3 and assess radiation damage. The findings show that alpha particles are primarily stopped by electrons, with ionization dominating energy dissipation, while phonon and vacancy‑related losses contribute negligibly. Over the investigated energy range, ionization loss increased with radiation energy, while both phonon and vacancy losses decreased. At a radiation energy of 2.05 MeV, ionization accounts for 99.41% of the total energy loss, while phonon excitation and vacancy formation contribute only 0.03 and 0.52%, respectively. As the radiation energy increased from 2.05 to 5.48 MeV, the peak energy absorbed by Ga and O atoms decreased from 0.81 and 0.84 eV to 0.62 eV, respectively. Alpha particles in Ga2O3 have a spatial distribution similar to a tadpole. The calculated maximum values were 0.0347 for displacement per atom (DPA), 1.63 × 1021 cm–3 for VGa concentration, and 1.65 × 1021 cm–3 for VO concentration. These results demonstrate that alpha particle irradiation causes substantial damage in Ga2O3, posing a critical threat to both material integrity and device functionality.

α粒子辐射对Ga2O3损伤的蒙特卡罗分析
在这项研究中,我们使用蒙特卡罗方法模拟了α粒子与Ga2O3的相互作用,并评估了辐射损伤。研究结果表明,α粒子主要被电子阻止,电离主导能量耗散,而声子和空位相关损失的贡献可以忽略不计。在所研究的能量范围内,电离损失随着辐射能量的增加而增加,而声子和空位损失则减少。在辐射能量为2.05 MeV时,电离占总能量损失的99.41%,而声子激发和空位形成分别只占0.03%和0.52%。随着辐射能量从2.05增加到5.48 MeV, Ga和O原子吸收的峰值能量分别从0.81和0.84 eV降低到0.62 eV。α粒子在Ga2O3中的空间分布类似于蝌蚪。计算得到的最大值为每原子位移(DPA) 0.0347、VGa浓度1.63 × 1021 cm-3、VO浓度1.65 × 1021 cm-3。这些结果表明,α粒子辐照会对Ga2O3造成实质性的损伤,对材料的完整性和器件的功能构成严重威胁。
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来源期刊
Technical Physics Letters
Technical Physics Letters 物理-物理:应用
CiteScore
1.50
自引率
0.00%
发文量
44
审稿时长
2-4 weeks
期刊介绍: Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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