Vidushi Sharma,John Mark P. Martirez,Emily A. Carter
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引用次数: 0
Abstract
Abstract Point defects modify the local coordination environment of crystalline surfaces, creating distinct morphological features accessible to reaction intermediates during catalysis. Here we investigate how surface vacancies on a Cu(111) electrode influence the thermodynamics of primary electrochemical CO2 reduction intermediates and further alter the kinetics of CO hydrogenation. Using a density functional embedding framework, we combine a higher-accuracy embedded correlated wavefunction theory (ECW) treatment of the active region with a density functional theory (DFT) description of the extended electrode. ECW predicts a vacancy-induced relative stabilization of primary intermediates, especially CO and CHO (formyl), next to the defect, while COH (hydroxymethylidyne) remains largely unaffected relative to pristine (defect-free) Cu(111). Based on earlier ECW findings favoring proton-coupled electron transfer (PCET) mechanisms, here we study competing PCET electrochemical CO reduction pathways to CHO and COH, first at the DFT level, followed by ECW refinement. While DFT predicts both pathways to be kinetically accessible with a slight preference for COH formation, ECW systematically increases activation barriers while maintaining a lower barrier along the COH pathway. At experimental onset potentials for hydrocarbon production on Cu(111) (−0.9 V vs RHE), ECW predicts exergonic CHO formation but with a substantial activation barrier, whereas COH formation remains endergonic but kinetically much more accessible. Our results indicate that, under typical operating conditions, defect-engineered Cu(111) surfaces with vacancies will exhibit kinetic selectivity toward the COH pathway – like Cu(100) but in contrast to pristine Cu(111), where the latter has an equal propensity for both pathways at the experimental onset potential of −0.9 V vs RHE.
点缺陷改变了晶体表面的局部配位环境,在催化过程中为反应中间体创造了不同的形态特征。在这里,我们研究了Cu(111)电极上的表面空位如何影响初级电化学CO2还原中间体的热力学,并进一步改变CO加氢动力学。利用密度泛函嵌入框架,我们将更高精度的嵌入相关波函数理论(ECW)处理与扩展电极的密度泛函理论(DFT)描述结合起来。ECW预测了空位诱导的初级中间体的相对稳定,特别是CO和CHO(甲酰基),靠近缺陷,而COH(羟甲酰基)相对于原始(无缺陷)Cu在很大程度上不受影响(111)。基于早期支持质子耦合电子转移(PCET)机制的ECW发现,本研究首先在DFT水平上研究PCET电化学CO还原CHO和COH的竞争途径,然后对ECW进行细化。虽然DFT预测这两条途径在动力学上都是可接近的,并且略微倾向于形成COH,但ECW系统地增加了激活屏障,同时保持了COH途径上较低的屏障。在Cu(111)上产烃的实验电位(- 0.9 V vs RHE)下,ECW预测CHO的生成是自激的,但存在很大的激活屏障,而COH的生成仍然是自激的,但在动力学上更容易实现。我们的研究结果表明,在典型的操作条件下,具有空位的缺陷工程Cu(111)表面将表现出对COH途径的动力学选择性-像Cu(100)一样,但与原始Cu(111)相反,后者在实验开始电位为−0.9 V vs RHE时对两种途径具有相同的倾向。
期刊介绍:
The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.