X-ray-Excited Radioluminescence, Thermoluminescence, and Tunnel Recombination Processes of Sc3+ Centers in LuAG:Sc Crystal Scintillators

IF 3.4 3区 化学 Q2 CHEMISTRY, PHYSICAL
Kuanyshbek Shunkeyev,Shynar Sagimbayeva,Adelya Kenzhebayeva,Tetiana Zorenko,Sandra Witkiewicz-Lukaszek,Sergiy Nizhankovskiy,Yuriy Zorenko
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Abstract

Abstract Single crystals of Lu3Al5O12 (LuAG) doped with 1 at. % Sc3+ were investigated to clarify the role of Sc3+ centers in radioluminescence (RL), thermoluminescence (TSL), and tunnel luminescence (TL) processes. LuAG:Sc (1%) crystals were grown by the Horizontal Direct Crystallization method in a reducing CO/CO2 atmosphere and compared with an undoped LuAG counterpart prepared under the same conditions. X-ray-excited RL spectra were measured in the temperature range of 80–400 K. Trap-related phenomena were studied by TSL spectroscopy and glow-curve analysis after X-ray irradiation at 80 K, as well as by measurements of TL following X-ray switch-off at 80 K. Sc3+ doping introduces intense UV emission associated with Sc3+ centers occupying dodecahedral (ScLu) and octahedral (ScAl) sites, while their interaction with LuAl antisite defects and oxygen vacancies VO modifies the radiative and trapping processes. LuAl antisite defects and their associations with oxygen vacancies, as well as Sc3+ dopants, also lead to the formation of efficient trapping centers responsible for pronounced TSL and TL signals in both LuAG and LuAG:Sc (1%) crystals. Correlation of the XRL, TSL, and TL spectra indicates that Sc3+ centers participate in both prompt and delayed recombination, while the different spectral contributions indicate the involvement of distinct or partially overlapping trapping and recombination pathways. The obtained results provide insight into charge-trapping and recombination processes in LuAG-based crystal scintillators doped with isoelectronic impurities.
LuAG: sc晶体闪烁体中Sc3+中心的x射线激发辐射发光、热发光和隧道复合过程
摘要掺杂1 at的Lu3Al5O12 (LuAG)单晶。研究了Sc3+中心在放射发光(RL)、热发光(TSL)和隧道发光(TL)过程中的作用。采用水平直接结晶法在CO/CO2还原气氛中生长LuAG:Sc(1%)晶体,并与在相同条件下制备的未掺杂LuAG相比较。在80 ~ 400 K的温度范围内测量了x射线激发RL光谱。通过TSL光谱和80k x射线辐照后的发光曲线分析,以及80k x射线关闭后的TL测量,研究了陷阱相关现象。Sc3+掺杂引入了与Sc3+中心占据十二面体(ScLu)和八面体(ScAl)位点相关的强紫外辐射,而它们与LuAl反位缺陷和氧空位VO的相互作用改变了辐射和俘获过程。LuAG和LuAG:Sc(1%)晶体中,LuAG反位缺陷及其与氧空位以及Sc3+掺杂的关联,也导致了有效俘获中心的形成,导致了明显的TSL和TL信号。XRL、TSL和TL光谱的相关性表明,Sc3+中心参与了提示重组和延迟重组,而不同的光谱贡献表明参与了不同或部分重叠的捕获和重组途径。所获得的结果对掺杂等电子杂质的luag基晶体闪烁体中的电荷捕获和重组过程提供了深入的了解。
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来源期刊
The Journal of Physical Chemistry C
The Journal of Physical Chemistry C 化学-材料科学:综合
CiteScore
6.50
自引率
8.10%
发文量
2047
审稿时长
1.8 months
期刊介绍: The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.
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