Site and Configuration-Dependent Oxygen Evolution on Pristine g-C3N4: First-Principles Insights Into Intrinsic Active-Site Heterogeneity

IF 3.2 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES
Riri Jonuarti, Maulana Reizqy Anughrah,  Syafri, Wilson Agerico Diño
{"title":"Site and Configuration-Dependent Oxygen Evolution on Pristine g-C3N4: First-Principles Insights Into Intrinsic Active-Site Heterogeneity","authors":"Riri Jonuarti,&nbsp;Maulana Reizqy Anughrah,&nbsp; Syafri,&nbsp;Wilson Agerico Diño","doi":"10.1002/adts.70581","DOIUrl":null,"url":null,"abstract":"<div>\n \n <p>Graphitic carbon nitride (g-C<sub>3</sub>N<sub>4</sub>) is a promising metal-free electrocatalyst for the oxygen evolution reaction (OER), yet the intrinsic site-dependent reactivity of pristine g-C<sub>3</sub>N<sub>4</sub> remains insufficiently characterized. Here, first-principles density functional theory was used to investigate OER at three adsorption sites: the Hollow site, Top C site, and Top N site, considering OH*, O*, and OOH* intermediates. OH* and O* adsorb favorably at all sites, whereas OOH* binds thermodynamically only at Top C (−0.07 eV) and is endothermic at Hollow (+1.83 eV) and Top N (+2.58 eV). Enumeration of all 27 possible site-assignment permutations along the four-step OER pathway using the computational hydrogen electrode (CHE) convention yields nine overpotential groups ranging from 2.18 to 5.80 V. The global minimum overpotential is 2.18 V when both OH* and OOH* occupy Top C, with the first water oxidation step as the potential-determining step at an onset potential of 3.41 V. For every configuration, the four reaction free energies sum to 4.92 eV at U = 0 V, confirming thermodynamic consistency. Bader charge and partial density of states analyses further identify Top C as the most electronically active site, providing a quantitative baseline for rational g-C<sub>3</sub>N<sub>4</sub> OER catalyst design.</p>\n </div>","PeriodicalId":7219,"journal":{"name":"Advanced Theory and Simulations","volume":"9 10","pages":""},"PeriodicalIF":3.2000,"publicationDate":"2026-10-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Advanced Theory and Simulations","FirstCategoryId":"5","ListUrlMain":"https://onlinelibrary.wiley.com/doi/10.1002/adts.70581","RegionNum":4,"RegionCategory":"工程技术","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"MULTIDISCIPLINARY SCIENCES","Score":null,"Total":0}
引用次数: 0

Abstract

Graphitic carbon nitride (g-C3N4) is a promising metal-free electrocatalyst for the oxygen evolution reaction (OER), yet the intrinsic site-dependent reactivity of pristine g-C3N4 remains insufficiently characterized. Here, first-principles density functional theory was used to investigate OER at three adsorption sites: the Hollow site, Top C site, and Top N site, considering OH*, O*, and OOH* intermediates. OH* and O* adsorb favorably at all sites, whereas OOH* binds thermodynamically only at Top C (−0.07 eV) and is endothermic at Hollow (+1.83 eV) and Top N (+2.58 eV). Enumeration of all 27 possible site-assignment permutations along the four-step OER pathway using the computational hydrogen electrode (CHE) convention yields nine overpotential groups ranging from 2.18 to 5.80 V. The global minimum overpotential is 2.18 V when both OH* and OOH* occupy Top C, with the first water oxidation step as the potential-determining step at an onset potential of 3.41 V. For every configuration, the four reaction free energies sum to 4.92 eV at U = 0 V, confirming thermodynamic consistency. Bader charge and partial density of states analyses further identify Top C as the most electronically active site, providing a quantitative baseline for rational g-C3N4 OER catalyst design.

原始g-C3N4上位置和构型依赖的氧演化:内在活性位点异质性的第一性原理见解
石墨氮化碳(g-C3N4)是一种很有前途的析氧反应(OER)的无金属电催化剂,但原始g-C3N4的固有位点依赖的反应活性尚未得到充分的表征。本文采用第一性原理密度泛函理论,考虑OH*、O*和OOH*中间体,研究了三个吸附位点:中空位点、Top C位点和Top N位点的OER。OH*和O*在所有位点都有良好的吸附,而OOH*仅在Top C (- 0.07 eV)处具有热力学结合,在Hollow (+1.83 eV)和Top N (+2.58 eV)处具有吸热作用。使用计算氢电极(CHE)惯例,沿着四步OER路径枚举所有27个可能的位点分配排列,产生9个过电位基团,范围从2.18到5.80 V。当OH*和OOH*同时占据Top C时,整体过电位最小值为2.18 V,第一个水氧化步骤为电位决定步骤,起始电位为3.41 V。对于每种构型,在U = 0 V时,四个反应自由能之和为4.92 eV,证实了热力学一致性。Bader电荷和偏态密度分析进一步确定了Top C是最具电子活性的位点,为合理设计g-C3N4 OER催化剂提供了定量基准。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Advanced Theory and Simulations
Advanced Theory and Simulations Multidisciplinary-Multidisciplinary
CiteScore
5.50
自引率
3.00%
发文量
221
期刊介绍: Advanced Theory and Simulations is an interdisciplinary, international, English-language journal that publishes high-quality scientific results focusing on the development and application of theoretical methods, modeling and simulation approaches in all natural science and medicine areas, including: materials, chemistry, condensed matter physics engineering, energy life science, biology, medicine atmospheric/environmental science, climate science planetary science, astronomy, cosmology method development, numerical methods, statistics
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