First-principles insight into the UV-driven anisotropy of NaXSiO4 (X = Al, Ga): structural, electronic, elastic and optical analysis

IF 1.7 4区 物理与天体物理 Q2 PHYSICS, MULTIDISCIPLINARY
Muhammad Suliman Khan, Yousaf Khan, Muhammad Sohail Ahmad
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引用次数: 0

Abstract

The pressing need for advanced ultraviolet (UV) materials, vital for aerospace, optoelectronics, and radiation hardened technologies, demands a deep understanding of structure property relationships in wide bandgap ceramics. This study explores the structural, electronic, elastic, and optical properties of NaXSiO4 (X = Al, Ga) through a density functional theory (DFT) investigation, with experimental level precision. Using WIEN2k calculations, we show that both compounds, with hexagonal frameworks of corner-sharing [AlO4]/[SiO4] and [GaO4]/[SiO4] tetrahedra, exhibit indirect bandgaps of 4.599 eV (NaAlSiO4) and 4.089 eV (NaGaSiO4), in their electronic band profiles, demonstrating their insulating nature. These materials displayed strong optical anisotropy, with UV peak absorption coefficients of (5.5 × 103 cm−1) for NaAlSiO4 and (5.8 × 103 cm−1) for NaGaSiO4 at 12.5 eV, surpassing conventional oxides like SiO2 and Al2O3. Mechanistic insights reveal that O-2p → Al/Si-3sp and Ga-4sp interband transitions drive their UV-selective behavior, and a marginally higher reflectivity of NaGaSiO4 of about 0.58 compared to 0.56 for NaAlSiO4 in the energy range of 12–13 eV, indicate that NaGaSiO4 serves effectively in UV-reflective coatings and UV shielding. The loss function analysis confirms that NaGaSiO4 exhibited an improved dynamic electronic response compared with NaAlSiO4, and the higher refractive index of NaGaSiO4 (1.8) as compared to NaAlSiO4 (1.75), highlights its potential for high-energy environments and UV optical applications, such as lenses and waveguides. Mechanically, NaAlSiO4 and NaGaSiO4 exhibit bulk moduluses (143.1458 GPa and 137.1902 GPa), ensuring durability under thermal and mechanical stress. This work establishes NaAlSiO4 and NaGaSiO4 as promising candidates for extreme UV applications and provides a DFT framework to accelerate the development of high-performance optical ceramics.

紫外光驱动下NaXSiO4 (X = Al, Ga)各向异性的第一性原理:结构、电子、弹性和光学分析
对先进的紫外线(UV)材料的迫切需求,对航空航天、光电子和辐射硬化技术至关重要,要求对宽禁带陶瓷的结构性能关系有深刻的理解。本研究探讨了结构、电子、弹性和光学性质NaXSiO4 (X = Al, Ga)通过密度泛函理论(DFT)的调查,与实验水平精度。通过WIEN2k计算,我们发现这两种化合物都具有棱角共享的六角形框架[AlO4]/[SiO4]和[GaO4]/[SiO4]四面体,在其电子能带剖面中表现出4.599 eV (NaAlSiO4)和4.089 eV (NaGaSiO4)的间接带隙,证明了它们的绝缘性质。这些材料表现出很强的光学各向异性,在12.5 eV下,NaAlSiO4和NaGaSiO4的紫外峰吸收系数分别为(5.5 × 103 cm−1)和(5.8 × 103 cm−1),超过了SiO2和Al2O3等传统氧化物。机理分析表明,O-2p→Al/Si-3sp和Ga-4sp带间跃迁驱动了它们的紫外选择行为,并且在12-13 eV的能量范围内,NaGaSiO4的反射率约为0.58,而NaAlSiO4的反射率为0.56,这表明NaGaSiO4有效地用于紫外线反射涂层和紫外线屏蔽。损失函数分析证实,与NaAlSiO4相比,NaGaSiO4表现出更好的动态电子响应,并且与NaAlSiO4(1.75)相比,NaGaSiO4的折射率更高(1.8),突出了其在高能环境和紫外光学应用(如透镜和波导)中的潜力。机械上,NaAlSiO4和NaGaSiO4表现出体积模量(143.1458 GPa和137.1902 GPa),确保在热应力和机械应力下的耐久性。这项工作确立了NaAlSiO4和NaGaSiO4作为极紫外应用的有前途的候选者,并提供了一个DFT框架来加速高性能光学陶瓷的发展。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Indian Journal of Physics
Indian Journal of Physics 物理-物理:综合
CiteScore
3.40
自引率
10.00%
发文量
275
审稿时长
3-8 weeks
期刊介绍: Indian Journal of Physics is a monthly research journal in English published by the Indian Association for the Cultivation of Sciences in collaboration with the Indian Physical Society. The journal publishes refereed papers covering current research in Physics in the following category: Astrophysics, Atmospheric and Space physics; Atomic & Molecular Physics; Biophysics; Condensed Matter & Materials Physics; General & Interdisciplinary Physics; Nonlinear dynamics & Complex Systems; Nuclear Physics; Optics and Spectroscopy; Particle Physics; Plasma Physics; Relativity & Cosmology; Statistical Physics.
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