SputterOne: A Physics-Informed Interactive Magnetron Sputtering Simulator Enabling a Process Digital Twin

IF 3.2 4区 工程技术 Q1 MULTIDISCIPLINARY SCIENCES
Balaji Gururajan
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引用次数: 0

Abstract

Magnetron sputtering is one of the most widely used physical vapor deposition techniques, yet systematic process optimization remains challenging it typically demands extensive physical experimentation or computationally intensive particle-in-cell, fluid, or Monte Carlo simulations. SputterOne is a browser-based physics-informed interactive simulation platform for real-time exploration of magnetron sputtering process conditions without installation or specialist software. The platform integrates the Yamamura–Bohdansky sputtering yield formulation, kinetic-theory mean free path transport, Berg-framework reactive sputtering hysteresis, co-sputtering composition estimation, and Bauer-scheme growth mode classification. Vacuum processing conditions and an integrated process advisory module are incorporated through simplified formulations. Sputtering yield predictions agree with Yamamura–Tawara reference values within experimental scatter across nine targets, and pressure-dependent transport reproduces deposition-rate attenuation consistent with established thin-film models. Reactive sputtering hysteresis is reproduced qualitatively for Ar/ O 2 ${\rm O}_2$ conditions. Experimental validation against Cu thin films on Si(100) confirms qualitative pressure-dependent transport trend reproduction; the parametric discharge model does not couple plasma density to working pressure and does not reproduce the experimentally observed rate increase with pressure, a limitation acknowledged in the Supplementary Material. All modules run at interactive frame rates in a standard web browser, making SputterOne a practical tool for process pre-screening, parameter exploration, and thin-film deposition research.

SputterOne:一个物理信息交互式磁控溅射模拟器,实现过程数字孪生
磁控溅射是应用最广泛的物理气相沉积技术之一,但系统的工艺优化仍然具有挑战性,它通常需要大量的物理实验或计算密集的颗粒-细胞,流体或蒙特卡罗模拟。SputterOne是一个基于浏览器的物理信息交互式仿真平台,用于实时探索磁控溅射过程条件,无需安装或专业软件。该平台集成了Yamamura-Bohdansky溅射产率公式、动力学理论平均自由程输运、Berg -框架反应溅射滞后、共溅射成分估计和Bauer - scheme生长模式分类。真空处理条件和集成工艺咨询模块通过简化的配方被纳入。溅射产率预测与Yamamura-Tawara在九个目标上的实验散射参考值一致,压力依赖输移再现了与已建立的薄膜模型一致的沉积速率衰减。对Ar/条件下的反应溅射迟滞进行了定性再现。对Si(100)上的Cu薄膜的实验验证证实了定性的压力依赖输运趋势再现;参数化放电模型不能将等离子体密度与工作压力耦合,也不能再现实验观察到的随压力增加的速率,这是补充材料中承认的一个限制。所有模块在标准web浏览器中以交互式帧率运行,使SputterOne成为工艺预筛选,参数探索和薄膜沉积研究的实用工具。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Advanced Theory and Simulations
Advanced Theory and Simulations Multidisciplinary-Multidisciplinary
CiteScore
5.50
自引率
3.00%
发文量
221
期刊介绍: Advanced Theory and Simulations is an interdisciplinary, international, English-language journal that publishes high-quality scientific results focusing on the development and application of theoretical methods, modeling and simulation approaches in all natural science and medicine areas, including: materials, chemistry, condensed matter physics engineering, energy life science, biology, medicine atmospheric/environmental science, climate science planetary science, astronomy, cosmology method development, numerical methods, statistics
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