Tailoring Mechanical Stability and Electronic Structure in TiNiSn-Based Half-Heusler Alloys via Sn-Site Doping: A DFT Study

IF 2.7 3区 化学 Q3 CHEMISTRY, PHYSICAL
Md. Rafedul Haque, Md. Ali Munna, Sanjida Ahmed Saima, Zahid Hasan
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引用次数: 0

Abstract

Half-Heusler compounds are promising quantum materials for thermoelectric applications due to their excellent electronic properties, including semiconductivity, thermoelectricity and topological insulating behavior. However, optimizing their mechanical stability and optical phenomena remains a challenge. This study employs density functional theory (DFT) with the generalized gradient approximation (GGA-PBE) for the exchange-correlation functional to characterize the novel quaternary Half-Heusler alloys ANiSn0.5M0.5 (A = Zr, Ti; M = Si, Ge, Sb). The structural, electronic, thermodynamic, mechanical and optical properties were systematically analyzed. Although the compositions via fractional substitution are unexplored, this investigation reported a comparison analysis alongside prior articles on related samples. Surprisingly, structural analysis suggests that the samples exhibit a cubic to tetragonal transition, while elastic constants confirm that TiNiSn0.5Si0.5 and TiNiSn0.5Sb0.5 are highly mechanically stable materials. Moreover, Pugh's ratio of 2.01 (for TiNiSn0.5Si0.5) and 3.25 (for TiNiSn0.5Sb0.5), alongside Debye temperatures of 360.02 and 231.43 K, respectively, were obtained, indicating a ductile character and strong phonon scattering and potentially low lattice thermal conductivity. Electronic structure analysis shows that Sb doping introduces metallic behavior, while Si/Ge alloying maintains semiconducting character. Furthermore, optical behavior reveals higher absorption at the visible-lower UV regions, fluctuated reflectivity around 0.5 and a lower level of conductivity and dielectric constant. While fractional Sn-site substitution strategies have precedent in related half-Heusler families, the specific ANiSn0.5M0.5 compositions examined here, together with their combined electronic, mechanical, and optical characterization, have not been previously reported, and this investigation situates the results within the context of prior work on related compounds.

通过sn位掺杂调整tinnis基半heusler合金的机械稳定性和电子结构:DFT研究
半赫斯勒化合物由于其优异的电子性能,包括半导体性、热电性和拓扑绝缘性,是热电应用中很有前途的量子材料。然而,优化它们的机械稳定性和光学现象仍然是一个挑战。本文采用密度泛函理论(DFT)和广义梯度近似(GGA-PBE)的交换相关泛函来表征新型四元半heusler合金ANiSn0.5M0.5 (A = Zr, Ti; M = Si, Ge, Sb)。系统地分析了材料的结构、电子、热力学、力学和光学性能。虽然通过分数替代的成分尚未被探索,但该调查报告了与先前有关样品的文章的比较分析。令人惊讶的是,结构分析表明样品表现出立方到四方的转变,而弹性常数证实了TiNiSn0.5Si0.5和TiNiSn0.5Sb0.5是高度机械稳定的材料。此外,Pugh’s比值为2.01(对于TiNiSn0.5Si0.5)和3.25(对于TiNiSn0.5Sb0.5), Debye温度分别为360.02和231.43 K,表明该材料具有延展性,声子散射强,晶格导热系数可能较低。电子结构分析表明,Sb的掺杂引入了金属行为,而Si/Ge合金则保持了半导体性质。此外,光学行为表明,在可见光-低紫外区域有较高的吸收,反射率波动在0.5左右,电导率和介电常数水平较低。虽然在相关的半heusler家族中有少量sn位点取代策略的先例,但本文研究的特定的ANiSn0.5M0.5组合物,以及它们的电子、机械和光学综合表征,以前没有报道过,并且本研究将结果置于相关化合物的先前工作的背景下。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
International Journal of Quantum Chemistry
International Journal of Quantum Chemistry 化学-数学跨学科应用
CiteScore
4.70
自引率
4.50%
发文量
185
审稿时长
2 months
期刊介绍: Since its first formulation quantum chemistry has provided the conceptual and terminological framework necessary to understand atoms, molecules and the condensed matter. Over the past decades synergistic advances in the methodological developments, software and hardware have transformed quantum chemistry in a truly interdisciplinary science that has expanded beyond its traditional core of molecular sciences to fields as diverse as chemistry and catalysis, biophysics, nanotechnology and material science.
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