{"title":"Fabrication and Characterization of Perovskite/Silicon Tandem Solar Cells with a Black Silicon Interlayer","authors":"G. Y. Ayvazyan, M. V. Katkov, L. M. Lakhoyan","doi":"10.1134/S1068337226700477","DOIUrl":null,"url":null,"abstract":"<p>The results of an experimental study of fabricated monolithic perovskite/silicon tandem solar cells with a nanostructured black silicon interlayer are presented. It is shown that the integration of a black silicon layer with an optimal thickness of 530 nm leads to an increase in power conversion efficiency from 26.2 to 27.8% compared to a planar architecture. The main contribution arises from an increase in the short-circuit current density due to reduced reflection and enhanced light absorption at the interface between the subcells. The slight decrease in the open-circuit voltage is attributed to increased charge carrier recombination at the textured surface of black silicon. The experimental results qualitatively confirm the conclusions of the numerical modeling.</p>","PeriodicalId":623,"journal":{"name":"Journal of Contemporary Physics (Armenian Academy of Sciences)","volume":"61 2","pages":"222 - 227"},"PeriodicalIF":0.5000,"publicationDate":"2026-09-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of Contemporary Physics (Armenian Academy of Sciences)","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1134/S1068337226700477","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q4","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The results of an experimental study of fabricated monolithic perovskite/silicon tandem solar cells with a nanostructured black silicon interlayer are presented. It is shown that the integration of a black silicon layer with an optimal thickness of 530 nm leads to an increase in power conversion efficiency from 26.2 to 27.8% compared to a planar architecture. The main contribution arises from an increase in the short-circuit current density due to reduced reflection and enhanced light absorption at the interface between the subcells. The slight decrease in the open-circuit voltage is attributed to increased charge carrier recombination at the textured surface of black silicon. The experimental results qualitatively confirm the conclusions of the numerical modeling.
期刊介绍:
Journal of Contemporary Physics (Armenian Academy of Sciences) is a journal that covers all fields of modern physics. It publishes significant contributions in such areas of theoretical and applied science as interaction of elementary particles at superhigh energies, elementary particle physics, charged particle interactions with matter, physics of semiconductors and semiconductor devices, physics of condensed matter, radiophysics and radioelectronics, optics and quantum electronics, quantum size effects, nanophysics, sensorics, and superconductivity.