Material-scale effective-band-edge theory of charged-domain-wall bound states in α-In2Se3.

Ye Zhou
{"title":"Material-scale effective-band-edge theory of charged-domain-wall bound states in α-In2Se3.","authors":"Ye Zhou","doi":"10.1088/1361-648X/aea510","DOIUrl":null,"url":null,"abstract":"<p><p>Charged ferroelectric domain walls in two-dimensional semiconductors provide a route to rewritable&#xD;one-dimensional electronic channels, but the relation between atomic reconstruction and transverse&#xD;confinement is not transparent from either macroscopic electrostatics or first-principles calculations&#xD;alone. Motivated by recent atomic-resolution studies of α-In2Se3, where head-to-head walls contain&#xD;a nonpolar β-like intercalated layer whereas tail-to-tail walls remain atomically abrupt, we develop&#xD;a material-scale effective-band-edge theory for transverse domain-wall bound states. The material&#xD;input is used as deliberately broad consistency windows, not as a direct fit to digitized density-&#xD;functional or spectroscopic band-edge profiles. The smooth sector is exactly solvable: a lowest-order&#xD;local band-edge ansatz reduces neutral walls to the Pöschl-Teller class and charged walls to the&#xD;asymmetric Rosen-Morse class. This yields closed-form spectra, wave-function skewness, and exact&#xD;delocalization boundaries. The same solution gives a useful constraint on smooth confinement:&#xD;states near the localization boundary collapse onto the lower continuum edge, so smooth band&#xD;bending alone does not, within the material windows considered here, simultaneously reproduce&#xD;the HH depth, width, and center locking. We then add the minimal HH structural correction,&#xD;represented by a central short-range β-layer lowering, and analyze both its δ-layer limit and finite-&#xD;width implementations. Material-scale anchoring to effective masses, nanometer-scale wall widths,&#xD;and structural energy scales relevant to α-In2Se3 supports a branch-selective picture: the abrupt&#xD;TT wall is naturally described as a shallow hole-like effective band-bending channel, whereas the&#xD;reconstructed HH wall is described by an electron-like smooth baseline supplemented by a central&#xD;β-layer lowering. The theory provides a compact intermediate description connecting atomistic&#xD;charged-wall reconstruction to mesoscopic one-dimensional confinement.</p>","PeriodicalId":520686,"journal":{"name":"Journal of physics. Condensed matter : an Institute of Physics journal","volume":" ","pages":""},"PeriodicalIF":0.0000,"publicationDate":"2026-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of physics. Condensed matter : an Institute of Physics journal","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1088/1361-648X/aea510","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

Charged ferroelectric domain walls in two-dimensional semiconductors provide a route to rewritable one-dimensional electronic channels, but the relation between atomic reconstruction and transverse confinement is not transparent from either macroscopic electrostatics or first-principles calculations alone. Motivated by recent atomic-resolution studies of α-In2Se3, where head-to-head walls contain a nonpolar β-like intercalated layer whereas tail-to-tail walls remain atomically abrupt, we develop a material-scale effective-band-edge theory for transverse domain-wall bound states. The material input is used as deliberately broad consistency windows, not as a direct fit to digitized density- functional or spectroscopic band-edge profiles. The smooth sector is exactly solvable: a lowest-order local band-edge ansatz reduces neutral walls to the Pöschl-Teller class and charged walls to the asymmetric Rosen-Morse class. This yields closed-form spectra, wave-function skewness, and exact delocalization boundaries. The same solution gives a useful constraint on smooth confinement: states near the localization boundary collapse onto the lower continuum edge, so smooth band bending alone does not, within the material windows considered here, simultaneously reproduce the HH depth, width, and center locking. We then add the minimal HH structural correction, represented by a central short-range β-layer lowering, and analyze both its δ-layer limit and finite- width implementations. Material-scale anchoring to effective masses, nanometer-scale wall widths, and structural energy scales relevant to α-In2Se3 supports a branch-selective picture: the abrupt TT wall is naturally described as a shallow hole-like effective band-bending channel, whereas the reconstructed HH wall is described by an electron-like smooth baseline supplemented by a central β-layer lowering. The theory provides a compact intermediate description connecting atomistic charged-wall reconstruction to mesoscopic one-dimensional confinement.

α-In2Se3中带电畴壁结合态的材料尺度有效带边理论。
二维半导体中的带电铁电畴壁提供了一条通往可重写的一维电子通道的途径,但是原子重构和横向约束之间的关系仅从宏观静电学或第一性原理计算来看都是不透明的。受最近α-In2Se3原子分辨率研究的启发,其中首尾壁包含 ;一个非极性β样插入层,而尾尾壁仍然是原子突变,我们发展了 ;横向畴壁结合态的材料尺度有效带边理论。材料输入被故意用作宽一致性窗口,而不是直接适合数字化密度-功能或光谱带边缘轮廓。光滑扇区是完全可解的:最低阶局部带边ansatz将中性壁减少到Pöschl-Teller类,并将带电壁减少到不对称的罗森-莫尔斯类。这产生了封闭形式的谱、波函数偏度和精确的 ;离域边界。同样的解给出了光滑约束的一个有用约束:局部化边界附近的 ;状态坍缩到下连续体边缘,因此在这里考虑的材料窗口内,仅平滑带 ;弯曲不会同时再现 ; HH深度、宽度和中心锁定。然后,我们添加了最小HH结构修正 ;,以中心短距离β层降低为代表,并分析了其δ层极限和有限宽度实现。材料尺度对有效质量、纳米尺度壁宽、 ;和与α-In2Se3相关的结构能量尺度的锚定支持了一个分支选择性的图像:突然的 ;TT壁自然地被描述为一个浅空穴状的有效带弯曲通道,而 ;重建的HH壁被描述为一个类似电子的光滑基线,并辅以中心的 ;β层下降。该理论提供了一种紧凑的中间描述,将原子电荷壁重建与介观一维约束联系起来。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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