Asymmetric exposure to MoS2 nanosheets triggers redox-mediated hormesis effect in plant roots: Insights from in situ chip tracking

IF 9.4
Soil & Environmental Health Pub Date : 2026-07-01 Epub Date: 2026-06-11 DOI:10.1016/j.seh.2026.100220
Yilun Lan, Xiangyu Zhu, Wentao Yu, Kun Wang, Baohai Li, Baoliang Chen
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Abstract

The rhizosphere is microscopically heterogeneous, yet the impacts of uneven distribution of nanomaterials on plant roots remain unclear. Here, using Arabidopsis thaliana and MoS2 nanosheets as the model plant and nanomaterial, we employed a microfluidic root chip housed in a Petri dish with moist dust-free paper to investigate root responses to spatially asymmetric exposure. We compared symmetric exposure (half dose delivered to each root side; a homogeneous scenario) with asymmetric exposure (full dose to one side; a heterogeneous scenario) of MoS2 nanosheets over a 5-day period. Results showed that this spatial distinction alone is sufficient to elicit divergent plant growth and physiological responses in seedling roots. Real-time imaging revealed that symmetric exposure induced a classic dose-dependent toxicity from excess MoS2 nanosheet-induced stress oxidative damage, whereas asymmetric exposure elicited a hormesis effect on root growth, with asymmetric exposure of 50 mg L−1 MoS2 nanosheets for 64 h increasing root length by 18% compared to symmetric exposure at 25 mg L−1. Mechanistic investigations, integrating dynamic monitoring and inhibition experiments using fluorescence probes and an auxin reporter, showed that localized stimulation promoted root growth via Fe2+-dependent reactive oxygen species (ROS). The data signaled that asymmetric exposure increased Fe2+ and ROS levels by 1.7-fold and 2.0-fold relative to symmetric exposure, leading to auxin accumulation in root tips. Our findings demonstrate that spatial heterogeneity is a critical consideration for evaluating and designing the application of redox-active nanomaterials.

Abstract Image

不对称暴露于二硫化钼纳米片触发植物根系氧化还原介导的激效效应:来自原位芯片跟踪的见解
根际在微观上是不均匀的,但纳米材料的不均匀分布对植物根系的影响尚不清楚。本研究以拟南芥和MoS2纳米片为模式植物和纳米材料,采用微流控根芯片置于培养皿中,用湿润无尘纸研究根系对空间不对称暴露的响应。在5天的时间内,我们比较了二硫化钼纳米片的对称暴露(每根侧均给予半剂量,均质情况)和非对称暴露(一侧全剂量,均质情况)。结果表明,仅这种空间差异就足以引起植物幼苗根系的生长和生理反应的差异。实时成像显示,对称暴露诱导了过量MoS2纳米片诱导的典型剂量依赖性毒性,而不对称暴露引起了对根生长的激效效应,不对称暴露50 mg L−1 MoS2纳米片64 h,与对称暴露25 mg L−1相比,根长度增加了18%。机制研究,结合荧光探针和生长素报告基因的动态监测和抑制实验,表明局部刺激通过Fe2+依赖性活性氧(ROS)促进根生长。数据表明,相对于对称暴露,不对称暴露使Fe2+和ROS水平分别增加1.7倍和2.0倍,导致生长素在根尖积累。我们的研究结果表明,空间异质性是评估和设计氧化还原活性纳米材料应用的关键考虑因素。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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CiteScore
1.80
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