The Effect of Bismuth Oxide Additive on Sintering of Zirconia Ceramics at Reduced Compaction Pressure

IF 0.8 4区 物理与天体物理 Q4 PHYSICS, APPLIED
S. A. Ghyngazov, I. P. Vasiliev, A. P. Klishin, A. S. Ghyngazov, S. A. Shevelev, V. P. Krivobokov
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引用次数: 0

Abstract

The influence of the low-melting additive bismuth oxide on the consolidation processes of partially stabilized zirconium dioxide nanoparticles in compacts obtained under compacting pressures was studied: 1, 50, and 800 kg/cm2. It is shown that, at a compacting pressure of ≤50 kg/cm2, the density of the compacts is comparable in magnitude to the bulk density. It has been established that the introduction of a low-melting additive facilitates the production of ceramics from compacts of low density obtained at pressures from 1 to 50 kg/cm2. At compacting pressure ≥50 kg/cm2, the presence of the additive helps to obtain ceramics with a density of ≥5.8 g/cm3. During sintering, the concentration area of the additive is located in the intergranular boundaries. The presence of additives in ceramics, due to phase transformations with temperature changes, leads to crack formation mainly along grain boundaries. For low compacting pressures, a decrease in porosity and an increase in density and average grain size are observed as the compacting pressure and the content of the low-melting oxide additive increase. The research results are of great importance for the development of new ceramic 3D printing technologies.

Abstract Image

氧化铋添加剂对氧化锆陶瓷降压烧结的影响
在1、50和800 kg/cm2压实压力下,研究了低熔点氧化铋添加剂对部分稳定二氧化锆纳米颗粒在压实材料中固结过程的影响。结果表明,在压实压力≤50 kg/cm2时,压实材料的密度与体积密度相当。已经确定,引入低熔点添加剂有助于在1至50 kg/cm2的压力下从低密度的压块中生产陶瓷。在压实压力≥50 kg/cm2时,添加剂的存在有助于获得密度≥5.8 g/cm3的陶瓷。在烧结过程中,添加剂的集中区域位于晶间边界。陶瓷中添加剂的存在,由于温度变化导致相变,导致裂纹主要沿晶界形成。在低压实压力下,随着压实压力和低熔点氧化物添加剂含量的增加,孔隙率降低,密度和平均晶粒尺寸增大。研究成果对新型陶瓷3D打印技术的发展具有重要意义。
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来源期刊
Technical Physics Letters
Technical Physics Letters 物理-物理:应用
CiteScore
1.50
自引率
0.00%
发文量
44
审稿时长
2-4 weeks
期刊介绍: Technical Physics Letters is a companion journal to Technical Physics and offers rapid publication of developments in theoretical and experimental physics with potential technological applications. Recent emphasis has included many papers on gas lasers and on lasing in semiconductors, as well as many reports on high Tc superconductivity. The excellent coverage of plasma physics seen in the parent journal, Technical Physics, is also present here with quick communication of developments in theoretical and experimental work in all fields with probable technical applications. Topics covered are basic and applied physics; plasma physics; solid state physics; physical electronics; accelerators; microwave electron devices; holography.
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