Electrodeposition growth of multiphase metal telluride thin films: Structural, optical, electrical properties, and DFT calculations

IF 5.2 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Panupat Chaiworn , Pensri Pramukkul , Prayoonsak Pluengphon , Ekasiddh Wongrat , Phathaitep Raksa , Piyanooch Nedkun , Auttasit Tubtimtae
{"title":"Electrodeposition growth of multiphase metal telluride thin films: Structural, optical, electrical properties, and DFT calculations","authors":"Panupat Chaiworn ,&nbsp;Pensri Pramukkul ,&nbsp;Prayoonsak Pluengphon ,&nbsp;Ekasiddh Wongrat ,&nbsp;Phathaitep Raksa ,&nbsp;Piyanooch Nedkun ,&nbsp;Auttasit Tubtimtae","doi":"10.1016/j.matchemphys.2026.132752","DOIUrl":null,"url":null,"abstract":"<div><div>This study investigated the effects of applied electrodeposition potentials on the structural, optical, and electrical properties of multiphase metal telluride thin films for optoelectronic applications. The rhombohedral Sb<sub>2</sub>Te<sub>3</sub>, Bi<sub>2</sub>Te<sub>3</sub>, Al<sub>7</sub>Te<sub>10</sub>, and Bi<sub>4</sub>Te<sub>3</sub> phases were identified and incorporated into thin films containing hexagonal Bi<sub>2</sub>Te, BiTe, and monoclinic Al<sub>2</sub>Te<sub>3</sub>. Variations in the crystallographic parameters are attributed to recrystallization and phase transformation processes driven by the energy stored in the parent Bi<sub>2</sub>Te<sub>3</sub> phase. Scanning electron microscopy (SEM<em>)</em> images showed a compact inner surface covered with residuals dispersed across the film surface at the applied potentials of 4 and 6 V. At an applied potential of 8 V, crack formation accompanied by a reduction in surface residuals was observed, whereas films deposited at 10 V exhibited more pronounced cracking with no noticeable residuals. Energy-dispersive X-ray spectroscopy <em>(</em>EDS<em>)</em> confirmed the presence of Al, Sb, Te, and Bi in all the deposited films, indicating the successful incorporation of binary multiphase metal chalcogenide compounds. The band gaps of the deposited films are decreased with increasing electrodeposition potential, highlighting the tunability of the electronic properties of multiphase metal telluride thin films. A significant decline in the activation energy <em>(E</em><sub>ac</sub><em>)</em> was observed between 6 and 8 V, suggesting that this range is the optimal applied voltage window for device applications due to enhanced thermally activated conduction. Finally, density functional theory <em>(</em>DFT<em>)</em> calculations of the photoabsorption coefficient indicated that Bi<sub>2</sub>Te<sub>3</sub> and Sb<sub>2</sub>Te<sub>3</sub> exhibited higher absorption coefficients than Al<sub>2</sub>Te<sub>3</sub> and Al<sub>7</sub>Te<sub>10</sub>. Among these materials, Bi<sub>2</sub>Te<sub>3</sub> exhibited the strongest absorption coefficient at higher photon energies, whereas the other phases exhibited enhanced absorption in the red-light region.</div></div>","PeriodicalId":18227,"journal":{"name":"Materials Chemistry and Physics","volume":"362 ","pages":"Article 132752"},"PeriodicalIF":5.2000,"publicationDate":"2026-06-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Chemistry and Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0254058426007455","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0

Abstract

This study investigated the effects of applied electrodeposition potentials on the structural, optical, and electrical properties of multiphase metal telluride thin films for optoelectronic applications. The rhombohedral Sb2Te3, Bi2Te3, Al7Te10, and Bi4Te3 phases were identified and incorporated into thin films containing hexagonal Bi2Te, BiTe, and monoclinic Al2Te3. Variations in the crystallographic parameters are attributed to recrystallization and phase transformation processes driven by the energy stored in the parent Bi2Te3 phase. Scanning electron microscopy (SEM) images showed a compact inner surface covered with residuals dispersed across the film surface at the applied potentials of 4 and 6 V. At an applied potential of 8 V, crack formation accompanied by a reduction in surface residuals was observed, whereas films deposited at 10 V exhibited more pronounced cracking with no noticeable residuals. Energy-dispersive X-ray spectroscopy (EDS) confirmed the presence of Al, Sb, Te, and Bi in all the deposited films, indicating the successful incorporation of binary multiphase metal chalcogenide compounds. The band gaps of the deposited films are decreased with increasing electrodeposition potential, highlighting the tunability of the electronic properties of multiphase metal telluride thin films. A significant decline in the activation energy (Eac) was observed between 6 and 8 V, suggesting that this range is the optimal applied voltage window for device applications due to enhanced thermally activated conduction. Finally, density functional theory (DFT) calculations of the photoabsorption coefficient indicated that Bi2Te3 and Sb2Te3 exhibited higher absorption coefficients than Al2Te3 and Al7Te10. Among these materials, Bi2Te3 exhibited the strongest absorption coefficient at higher photon energies, whereas the other phases exhibited enhanced absorption in the red-light region.
多相碲化金属薄膜的电沉积生长:结构、光学、电学性质和DFT计算
本研究探讨了外加电沉积电位对多相碲化金属光电薄膜结构、光学和电学性能的影响。鉴定了菱形Sb2Te3、Bi2Te3、Al7Te10和Bi4Te3相,并将其合成了含有六方Bi2Te、BiTe和单斜Al2Te3的薄膜。晶体学参数的变化归因于在母体Bi2Te3相中储存的能量驱动下的再结晶和相变过程。扫描电子显微镜(SEM)图像显示,在4和6 V的外加电位下,薄膜的内表面覆盖着分散的残留物。在施加电位为8 V时,观察到裂纹的形成伴随着表面残留物的减少,而在10 V时沉积的薄膜表现出更明显的裂纹,没有明显的残留物。能量色散x射线能谱(EDS)证实了所有沉积膜中存在Al, Sb, Te和Bi,表明二元多相金属硫族化合物的成功掺入。沉积膜的带隙随电沉积电位的增大而减小,突出了多相碲化金属薄膜电子性能的可调性。在6至8 V之间观察到活化能(Eac)的显著下降,这表明由于增强的热激活传导,该范围是器件应用的最佳施加电压窗口。光吸收系数的密度泛函理论(DFT)计算表明,Bi2Te3和Sb2Te3的光吸收系数高于Al2Te3和Al7Te10。在这些材料中,Bi2Te3在较高光子能量下表现出最强的吸收系数,而其他相在红光区表现出增强的吸收。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 求助全文
来源期刊
Materials Chemistry and Physics
Materials Chemistry and Physics 工程技术-材料科学:综合
CiteScore
8.70
自引率
4.30%
发文量
1515
审稿时长
69 days
期刊介绍: Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
确定
请完成安全验证×
copy
已复制链接
快去分享给好友吧!
我知道了
右上角分享
点击右上角分享
0
联系我们:info@booksci.cn Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。 Copyright © 2023 布克学术 All rights reserved.
京ICP备2023020795号-1
ghs 京公网安备 11010802042870号
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术官方微信
小红书