Effect of substrate rotation and offset on film thickness uniformity in concave-target magnetron sputtering

IF 2.4 3区 化学 Q2 CHEMISTRY, MULTIDISCIPLINARY
CrystEngComm Pub Date : 2026-04-14 DOI:10.1039/D5CE01219H
Jiachen Dong, Baozhang Zhao, Fan Sheng, Pei Li, Li Zhang, Wei Zou, Mei Wang and Zhengwang Cheng
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Abstract

Thickness uniformity represents a critical quality metric for film deposition, in which controlling wafer-scale non-uniformity is a fundamental but vital requirement for advanced semiconductor manufacturing. Prior studies have demonstrated that concave target configurations can effectively mitigate the “edge phenomenon”, thereby improving thickness uniformity in magnetron-sputtered films. Extending the concave target design, this study develops a thickness distribution model that incorporates substrate-target offset, rotation speed, and deposition time. As the offset increases, the film thickness non-uniformity follows a V-shaped trend, firstly decreases and then increases. With increases in rotation speed and deposition time, the thickness non-uniformity exhibits an oscillatory attenuation behavior. Through three-dimensional two-parameter simulations, the optimal process conditions are identified as an offset of 42 mm, with the rotation speed synchronized to the deposition cycle. These findings offer a theoretical reference for preparing wafer-scale uniform films and are expected to be applicable across a variety of materials.

Abstract Image

衬底旋转和偏移对凹靶磁控溅射中膜厚均匀性的影响
厚度均匀性是薄膜沉积的关键质量指标,其中控制晶圆尺度的不均匀性是先进半导体制造的基本而重要的要求。已有研究表明,凹靶结构可以有效地缓解“边缘现象”,从而改善磁控溅射薄膜的厚度均匀性。在凹靶设计的基础上,本研究开发了一种包含基板-靶偏移量、转速和沉积时间的厚度分布模型。随着偏移量的增加,膜厚不均匀性呈先减小后增大的v型趋势。随着转速和沉积时间的增加,厚度非均匀性表现为振荡衰减。通过三维双参数模拟,确定了最佳工艺条件为偏移42 mm,转速与沉积周期同步。这些发现为制备晶圆级均匀薄膜提供了理论参考,并有望适用于各种材料。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
CrystEngComm
CrystEngComm 化学-化学综合
CiteScore
5.50
自引率
9.70%
发文量
747
审稿时长
1.7 months
期刊介绍: Design and understanding of solid-state and crystalline materials
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