Effect of Sm doping on the properties and structures of PIN-PMN-PT piezoelectric ceramics

Chunyang Zhao, Dashi Fu, Jinfeng Xu, Yalin Qin, Yongcheng Zhang
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引用次数: 3

Abstract

Ternary piezoelectric ceramics Pb(In[Formula: see text]Nb[Formula: see text])O 3 –Pb(Mg[Formula: see text]Nb[Formula: see text])O 3 –PbTiO 3 (PIN–PMN–PT) exhibit excellent temperature stability and hold great potential for high-frequency and high-power applications. However, its piezoelectric performance is much lower than that of the famous binary Pb(Mg[Formula: see text]Nb[Formula: see text])O 3 –PbTiO 3 (PMN–PT) system. In this work, high-performance 15PIN–50PMN–35PT piezoceramics with piezoelectric coefficient [Formula: see text] of 700 pC/N, electromechanical coupling coefficient [Formula: see text] of 66% and high Curie temperature [Formula: see text] of [Formula: see text]C were fabricated. Effect of Samarium (Sm) doping content on the ferroelectric, dielectric, electromechanical and piezoelectric properties and structures of 15PIN–50PMN–35PT piezoelectric ceramics were investigated, and results reveal that increasing the amount of Sm doping leads to a significant decrease of [Formula: see text], [Formula: see text], [Formula: see text] and other properties. This phenomenon is different from the previously reported results in Sm-doped binary PMN–PT ceramics. The room temperature and variable temperature phase structure and room temperature microstructure were studied to explain this phenomenon.
Sm掺杂对PIN-PMN-PT压电陶瓷性能和结构的影响
三元压电陶瓷Pb(In[公式:见文]Nb[公式:见文])o3 -Pb (Mg[公式:见文]Nb[公式:见文])o3 - pbtio3 (PIN-PMN-PT)具有优异的温度稳定性,在高频和大功率应用中具有很大的潜力。但其压电性能远低于著名的二元Pb(Mg[公式:见文]Nb[公式:见文])o3 - pbtio3 (PMN-PT)体系。本工作制备了压电系数[公式:见文]为700 pC/N、机电耦合系数[公式:见文]为66%、居里温度[公式:见文]为C的高性能15PIN-50PMN-35PT压电陶瓷。研究了钐(Sm)掺杂量对15PIN-50PMN-35PT压电陶瓷铁电性能、介电性能、机电性能和压电性能及结构的影响,结果表明,Sm掺杂量的增加会导致[公式:见文]、[公式:见文]、[公式:见文]等性能的显著降低。这一现象与先前报道的sm掺杂二元PMN-PT陶瓷的结果不同。研究了室温和变温相结构和室温显微组织来解释这一现象。
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