{"title":"Silicon from Shoda-Kedela (Georgia) Quartz Deposition","authors":"Tengiz Qamushadze, Korneli Svanidze, Gocha Kurdadze, Elza Khutsishvili, Nana Kobulashvili, Marina Chumbadze","doi":"10.4028/p-m9y8k2","DOIUrl":null,"url":null,"abstract":"Paper investigates the possibility of producing silicon from silica contained in Shoda-Kedela (Oni-Gebi district, Georgia) quartz deposition. Characterization of silica from Shoda-Kedela quartz rock is carried by its crushing, grinding, thermal analysis, studying composition and density. Metallurgical grade silicon (MG-Si) is obtained by reducing Shoda-Kedela quartz in its reaction with coke in an electric arc furnace at temperature of ~1800°C. The obtained in this way material reveals that Shoda-Kedela silica containing of 99.58% SiO 2 would be useful for developing the silicon high-technology production.","PeriodicalId":18262,"journal":{"name":"Materials Science Forum","volume":"1166 1","pages":"113-118"},"PeriodicalIF":0.0000,"publicationDate":"2025-11-06","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Science Forum","FirstCategoryId":"0","ListUrlMain":"https://doi.org/10.4028/p-m9y8k2","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Paper investigates the possibility of producing silicon from silica contained in Shoda-Kedela (Oni-Gebi district, Georgia) quartz deposition. Characterization of silica from Shoda-Kedela quartz rock is carried by its crushing, grinding, thermal analysis, studying composition and density. Metallurgical grade silicon (MG-Si) is obtained by reducing Shoda-Kedela quartz in its reaction with coke in an electric arc furnace at temperature of ~1800°C. The obtained in this way material reveals that Shoda-Kedela silica containing of 99.58% SiO 2 would be useful for developing the silicon high-technology production.