Microstructures and photovoltaic effect of Ba/Fe modified Bi0.5Na0.5TiO3 ferroelectric ceramics

Q4 Engineering

固体电子学研究与进展 Pub Date : 2025-03-01 DOI:10.1063/5.0252878

Mingqiang Zhong, Weixing Dou, Xiao Liu, Baohua Zhu, Liufang Meng, Changlai Yuan, Rusen Yang

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引用次数: 0

Abstract

Oxide ferroelectrics have great potential applications in optoelectronic and solar devices. However, most oxide ferroelectrics show wide bandgaps (>3.2 eV), limiting their use in the photovoltaic field. Adding BaFeO3 (BF) into the ferroelectric Bi0.5Na0.5TiO3 (BNT) matrix decreases the bandgap and enhances the photocurrent densities. This work prepares perovskite-structured (1 − x) Bi0.5Na0.5TiO3–xBaFeO3 (BNT–BF; x = 0.00–0.10) ceramics via the solid-state reaction. Increasing BF content reduces the rhombohedral distortion and weakens the ferroelectric ordering. The optical bandgap of the ceramics decreases from 3.10 eV (x = 0.00) to 1.70 eV (x = 0.10). The open-circuit voltage (Voc) and short-circuit current (Jsc) of the 0.95BNT–0.05BF sample under the illumination of simulated standard sunlight (AM 1.5, 100 mW/cm2) are 18.9 V and 1.75 μA/cm2, respectively. Significant improvements of Jsc = 3.85 μA/cm2 and Voc = 23.85 V, poled at 20 kV/cm, are achieved. The good performance of the BNT-BF demonstrates its excellent potential for applications in photovoltaics.

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Ba/Fe改性Bi0.5Na0.5TiO3铁电陶瓷的微观结构及光伏效应

氧化铁电体在光电和太阳能器件中具有巨大的应用潜力。然而，大多数氧化铁电体显示出宽的带隙（>3.2 eV），限制了它们在光伏领域的应用。在铁电Bi0.5Na0.5TiO3 （BNT）基体中加入BaFeO3 （BF）可减小带隙，提高光电流密度。本工作通过固相反应制备了钙钛矿结构（1−x） Bi0.5Na0.5TiO3-xBaFeO3 （BNT-BF; x = 0.00-0.10）陶瓷。增加BF含量可减少菱形畸变，降低铁电有序性。陶瓷的光学带隙从3.10 eV （x = 0.00）减小到1.70 eV （x = 0.10）。在模拟标准日光（AM 1.5、100 mW/cm2）照射下，0.95BNT-0.05BF样品的开路电压（Voc）和短路电流（Jsc）分别为18.9 V和1.75 μA/cm2。在20 kV/cm极化电压下，Jsc = 3.85 μA/cm2, Voc = 23.85 V得到了显著改善。BNT-BF的良好性能表明其在光伏领域具有良好的应用潜力。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

固体电子学研究与进展 Engineering-Electrical and Electronic Engineering

CiteScore

0.20

自引率

0.00%

发文量

4536

期刊介绍： The sponsor of Research and Progress of Solid State Electronics is Nanjing Institute of Electronic Devices, and the supervisor is China Electronics Technology Group Corporation, CN 32-1110/TN, ISSN 1000-3819. Founded in 1981, Research and Progress of Solid State Electronics is a core journal of Chinese science and technology and a source journal of the World Impact Index Report of Science and Technology Journals. The journal is included in the Chemical Abstracts of the United States, Scopus Database of the Netherlands, and the database of Japan Science and Technology Agency. It has won honors such as Jiangsu Province Excellent Journal Award, Ministry of Information Industry Editorial Quality Excellence Award, and Double-Effective Journal. Since 2022, it has received funding from the National Natural Science Foundation of China. Research and Progress of Solid State Electronics currently has columns such as "Wide Bandgap Semiconductors", "RF Microwaves and Terahertz", "Microelectronics and Microsystems", and "Device Materials and Processes".