Numerical simulation of plasma etching process with AAO mask based on PIC/MCC model

Abstract

This paper presents a Particle-in-Cell Monte Carlo Collision (PIC/MCC) numerical simulation to investigate plasma etching processes utilizing an anodic aluminum oxide (AAO) mask. The model characterizes key plasma parameters, including electron/ion density distributions and particle flux, and analyzes the interactions between plasma and the AAO mask/substrate during etching. By simulating plasma evolution within a cylindrical AAO cavity, this study reveals charge density distributions, particle trajectories, and the coupling effects of physical bombardment and chemical etching. The results provide a theoretical foundation for optimizing the fabrication of nanostructured silicon via AAO-templated dry etching, emphasizing the critical influence of charge accumulation on etching profiles.