Examination of the Real and Imaginary Parts of the Dielectric Permittivity of Aluminum Nitride Composites Before and After the Percolation Threshold

IF 0.6 4区 材料科学 Q3 MATERIALS SCIENCE, CERAMICS
V. I. Chasnyk, D. V. Chasnyk, O. M. Kaidash
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Abstract

Aluminum nitride composites with high resistivity are used in vacuum microwave devices as bulk microwave absorbers. Their application requires comprehensive characterization of electrophysical parameters over the desired frequency range. This primarily concerns their dielectric characteristics (real ε′ and imaginary ε″ parts of the complex dielectric permittivity and dielectric loss tangent tanδ) and electrical resistivity. For AlN–Mo composites produced by pressureless sintering, the dependences of the real and imaginary parts of complex dielectric permittivity were analyzed for a volume molybdenum content of 14–30%, i.e., both before and after the percolation threshold was exceeded. It was shown that ε′ and ε″ of the composites increased with the content of molybdenum particles both before and after the percolation threshold. Experimental values of the dielectric loss tangent tanδ are presented. They rise from 0.005 to 18 when the content of molybdenum particles increases from 20 to 28%. Starting from 25–30 % Mo, the dependences of the imaginary part ε″ of dielectric permittivity and the dielectric loss tangent tanδ are straight lines on a logarithmic scale. This behavior of tanδ and ε″ makes it possible to determine their values at 30% Mo. In this case, ε′ = 96–106, ε″ = (2.88–3.24) ∙ 104, and tanδ = 300. The calculated imaginary part of complex dielectric permittivity for bulk molybdenum at a frequency of 10 GHz is ε″ = 3.5 · 107, which is more than three orders of magnitude higher than ε″ of the AlN–30% Mo composite. The percolation threshold width for AlN–Mo composites with an average molybdenum particle size of 4–6 μm is about 3% at 25–28% Mo. In this range, the bulk electrical resistivity of the composite decreases from 9 · 1013 to 0.6 Ω ∙ cm. After the percolation threshold, over the range of 28–30% Mo, the electrical resistivity further decreases threefold, from 0.6 to 0.2 Ω ∙ cm.

Abstract Image

渗滤阈值前后氮化铝复合材料介电常数实虚部的检验
高电阻率氮化铝复合材料作为本体微波吸收剂应用于真空微波器件中。它们的应用需要在所需频率范围内对电物理参数进行全面表征。这主要涉及它们的介电特性(实ε′和虚ε′″复介电常数和介电损耗正切tanδ部分)和电阻率。对于无压烧结制备的AlN-Mo复合材料,分析了体积钼含量为14 ~ 30%(即超过渗透阈值之前和之后)时复介电常数实部和虚部的依赖关系。结果表明,在渗过阈值前后,复合材料的ε′和ε″随钼颗粒含量的增加而增大。给出了介质损耗正切tanδ的实验值。当钼颗粒含量从20%增加到28%时,它们从0.005增加到18。从25 ~ 30% Mo开始,介电常数的虚部ε″与介电损耗的正切tanδ在对数尺度上呈直线关系。tanδ和ε″的这种行为使得在30% Mo时确定它们的值成为可能。在这种情况下,ε ' = 96-106, ε″=(2.88-3.24)∙104,tanδ = 300。在10 GHz频率下,块状钼的复介电常数虚部为ε″= 3.5·107,比AlN-30% Mo复合材料的ε″高3个数量级以上。在25-28% Mo范围内,平均钼粒度为4-6 μm的AlN-Mo复合材料的渗透阈值宽度约为3%,在此范围内,复合材料的体电阻率从9·1013降低到0.6 Ω∙cm,在28-30% Mo范围内,渗透阈值后,复合材料的电阻率进一步降低三倍,从0.6降低到0.2 Ω∙cm。
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来源期刊
Powder Metallurgy and Metal Ceramics
Powder Metallurgy and Metal Ceramics 工程技术-材料科学:硅酸盐
CiteScore
1.90
自引率
20.00%
发文量
43
审稿时长
6-12 weeks
期刊介绍: Powder Metallurgy and Metal Ceramics covers topics of the theory, manufacturing technology, and properties of powder; technology of forming processes; the technology of sintering, heat treatment, and thermo-chemical treatment; properties of sintered materials; and testing methods.
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