Nonlocal thermoelastic response of semiconductor media with double porosity under photothermal excitation

Abstract

In light of the growing importance of micro- and nano-structured semiconductor devices under dynamic photothermal environments, this study presents an analytical investigation of the nonlocal thermoelastic response of a semiconductor medium with a double porosity structure under photothermal excitation, formulated within a two-dimensional framework. The governing equations are established based on Eringen’s nonlocal elasticity theory and the Lord–Shulman generalized thermoelastic model, incorporating two interacting pore networks characteristic of matrix and fracture systems. Using harmonic wave analysis (normal mode technique), the coupled field equations for displacement, temperature, stress, and carrier density are transformed into the frequency domain and solved analytically under laser-induced surface excitation. The resulting solutions reveal the spatial behavior of thermoelastic and photothermal fields, demonstrating significant influences of nonlocality, dual porosity, thermoelastic coupling, and thermoelectric interaction on wave dispersion, stress localization, and heat propagation. This work offers a comprehensive theoretical basis for the design and analysis of advanced porous semiconductor systems in photothermal applications.