Effect of pressure on lanthanide nitrides of NdN, HoN and ErN

IF 2.8 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications Pub Date : 2026-04-01 Epub Date: 2026-02-20 DOI:10.1016/j.ssc.2026.116375

Lun Xiong , Jiabo Hao , Lin Xia , Jinxia Zhu , Yingchun Ding

引用次数: 0

Abstract

In this study, the compression behavior of samples of NdN, HoN and ErN at room temperature and high pressure was studied using synchrotron radiation X-ray diffraction in a diamond anvil cell. All the three materials did not undergo structural phase transition under high pressure. By fitting the volume data under high pressure, the bulk modulus of NdN, HoN and ErN were obtained to be 146(7) GPa, 149(3) GPa, and 159(5) GPa, respectively. In addition, we have studied the equation of state and band structures of NdN, HoN and ErN using density functional theory. The bulk modulus of NdN, HoN and ErN derived from this method are 145 GPa, 175 GPa, and 181 GPa, respectively. Importantly, we observed that NdN, HoN and ErN demonstrate semiconductor properties throughout the entire high pressure range without significant changes.

查看原文本刊更多论文

压力对NdN、HoN和ErN镧系氮化物的影响

在本研究中，利用同步辐射x射线衍射在金刚石砧池中研究了NdN、HoN和ErN样品在室温和高压下的压缩行为。三种材料在高压下均未发生结构相变。通过拟合高压下的体积数据，得到NdN、HoN和ErN的体积模量分别为146(7)GPa、149(3)GPa和159(5)GPa。此外，我们还利用密度泛函理论研究了NdN、HoN和ErN的态方程和能带结构。该方法得到的NdN、HoN和ErN的体积模量分别为145 GPa、175 GPa和181 GPa。重要的是，我们观察到NdN， HoN和ErN在整个高压范围内都表现出半导体特性而没有显着变化。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

求助全文

约1分钟内获得全文求助全文

来源期刊

Solid State Communications 物理-物理：凝聚态物理

CiteScore

3.40

自引率

4.80%

发文量

287

审稿时长

51 days

期刊介绍： Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.