Enhancing Breakdown Field Strength and Energy Density in Sandwich-Structured P(VDF-HFP)/BT Films with BN Coating

IF 3.4 4区工程技术 Q2 ENGINEERING, CHEMICAL

Processes Pub Date : 2025-10-15 DOI:10.3390/pr13103295

Ying Cheng, Xueting Bai, Zhenyu Lu, Ruijue Wang, Wei Wang, Ruizhou Guo, Yudong Xu, Zhipeng Lei

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引用次数: 0

Abstract

With the rapid development of communication, electronics, medical, and energy industries in modern society, film capacitors have garnered widespread attention and undergone significant growth. However, the low energy density (Ue) resulting from low breakdown strength (Eb) significantly limits the application of thin-film capacitors. In this work, we use a low-cost and effective dip-coating method to apply boron nitride (BN) layers onto the outer layers of poly(vinylidene fluoride-co-hexafluoropropylene)/barium titanate (P(VDF-HFP)/BT) composite films to prepare boron nitride-poly(vinylidene fluoride-co-hexafluoropropylene/barium titanate-boron nitride (BN-P(VDF-HFP)/BT-BN) composite films with a sandwich structure that exhibits extremely high Eb and Ue. The experimental results show that the sandwich-structured BN-P(VDF-HFP)/BT-BN films containing 7.5 wt% BT nanoparticles obtained 530 MV/m Eb and 18.12 J/cm3 Ue, both of which are much higher than those of the corresponding monolayer films. In addition, the finite element simulation results show that the designed sandwich-structured films can reduce local field strength distortion, decrease leakage current, and suppress the development of breakdown channels, thereby significantly improving Eb and Ue. In summary, this study presents a low-cost and effective method for enhancing the breakdown strength and energy density of thin-film capacitors.

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BN涂层增强夹层结构P(VDF-HFP)/BT薄膜击穿场强和能量密度

随着现代社会通信、电子、医疗、能源等工业的迅速发展，薄膜电容器得到了广泛的关注，得到了长足的发展。然而，低击穿强度（Eb）导致的低能量密度（Ue）严重限制了薄膜电容器的应用。本研究采用低成本、高效的浸涂方法，在聚偏氟乙烯-共六氟丙烯/钛酸钡（P(VDF-HFP)/BT）复合薄膜的外层涂覆氮化硼（BN）层，制备出具有极高Eb和Ue的夹层结构的聚偏氟乙烯-共六氟丙烯/钛酸钡-氮化硼(BN-P(VDF-HFP)/BT-BN复合薄膜。实验结果表明，含有7.5 wt% BT纳米粒子的三明治结构BN-P(VDF-HFP)/BT- bn薄膜的Eb值为530 MV/m， Ue值为18.12 J/cm3，均远高于相应的单层膜。此外，有限元仿真结果表明，所设计的三明治结构薄膜可以减少局部场强畸变，降低泄漏电流，抑制击穿通道的发展，从而显著提高Eb和Ue。综上所述，本研究为提高薄膜电容器的击穿强度和能量密度提供了一种低成本、有效的方法。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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来源期刊

Processes Chemical Engineering-Bioengineering

CiteScore

5.10

自引率

11.40%

发文量

2239

审稿时长

14.11 days

期刊介绍： Processes (ISSN 2227-9717) provides an advanced forum for process related research in chemistry, biology and allied engineering fields. The journal publishes regular research papers, communications, letters, short notes and reviews. Our aim is to encourage researchers to publish their experimental, theoretical and computational results in as much detail as necessary. There is no restriction on paper length or number of figures and tables.