{"title":"Spin-polarized DFT+U insights into the multifunctional properties of rhombohedral (R3c) GaFeO3","authors":"Abhay Singh","doi":"10.1016/j.cocom.2026.e01240","DOIUrl":null,"url":null,"abstract":"<div><div>We present a spin-polarized first-principles study of rhombohedral (<em>R</em>3<em>c</em>) GaFeO<sub>3</sub> using GGA + U to investigate its structural, elastic, magnetic, electronic, optical, transport, and thermoelectric properties. Cation site disorder is found to be energetically comparable to the ordered phase and induces a ferrimagnetic imbalance, providing a microscopic explanation for experimentally observed weak ferromagnetism. Low-concentration Sr and Ni substitution at Fe sites stabilizes a ferrimagnetic ground state and drives antiferromagnetic-to-ferrimagnetic transitions accompanied by a semiconductor-to-half-metal crossover. Additionally, 6% compressive strain along the c-axis stabilizes a ferromagnetic phase, highlighting the complementary roles of doping and strain engineering. Elastic constants satisfy Born stability criteria, confirming mechanical robustness and magnetoelastic coupling. Magnetic exchange interactions are weak (∼2 meV), suggesting that competing magnetic states may be controlled by electric or intense optical fields, enabling magnetoelectric and magneto-optical effects. Electronic structure and optical analyses reveal tunable band gaps approaching 1.34 eV and strong absorption from the infrared to ultraviolet regions. Carrier transport calculations indicate dominant hole conduction. Thermoelectric properties show strong temperature dependence, with ZT values reaching 3.04 for p-type and ∼1.3 for n-type at 1025 K. These results establish GaFeO<sub>3</sub> as a tunable multifunctional material for thermoelectric, spintronic, and optoelectronic applications.</div></div>","PeriodicalId":46322,"journal":{"name":"Computational Condensed Matter","volume":"46 ","pages":"Article e01240"},"PeriodicalIF":4.0000,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Computational Condensed Matter","FirstCategoryId":"1085","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S2352214326000377","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/2/6 0:00:00","PubModel":"Epub","JCR":"Q3","JCRName":"PHYSICS, CONDENSED MATTER","Score":null,"Total":0}
引用次数: 0
Abstract
We present a spin-polarized first-principles study of rhombohedral (R3c) GaFeO3 using GGA + U to investigate its structural, elastic, magnetic, electronic, optical, transport, and thermoelectric properties. Cation site disorder is found to be energetically comparable to the ordered phase and induces a ferrimagnetic imbalance, providing a microscopic explanation for experimentally observed weak ferromagnetism. Low-concentration Sr and Ni substitution at Fe sites stabilizes a ferrimagnetic ground state and drives antiferromagnetic-to-ferrimagnetic transitions accompanied by a semiconductor-to-half-metal crossover. Additionally, 6% compressive strain along the c-axis stabilizes a ferromagnetic phase, highlighting the complementary roles of doping and strain engineering. Elastic constants satisfy Born stability criteria, confirming mechanical robustness and magnetoelastic coupling. Magnetic exchange interactions are weak (∼2 meV), suggesting that competing magnetic states may be controlled by electric or intense optical fields, enabling magnetoelectric and magneto-optical effects. Electronic structure and optical analyses reveal tunable band gaps approaching 1.34 eV and strong absorption from the infrared to ultraviolet regions. Carrier transport calculations indicate dominant hole conduction. Thermoelectric properties show strong temperature dependence, with ZT values reaching 3.04 for p-type and ∼1.3 for n-type at 1025 K. These results establish GaFeO3 as a tunable multifunctional material for thermoelectric, spintronic, and optoelectronic applications.