Strong out-of-plane magnetic anisotropy and elevated Curie temperatures in 2D ferromagnets NiSi2N4, NiGe2N4, and Janus NiSiGeN4

IF 5.2 3区 材料科学 Q2 MATERIALS SCIENCE, MULTIDISCIPLINARY
Materials Chemistry and Physics Pub Date : 2026-04-01 Epub Date: 2026-01-14 DOI:10.1016/j.matchemphys.2026.132053
Lahcen Aznague , Hanane Lahraichi , Zakaryae Haman , Moussa Kibbou , Ismail Essaoudi , Georges Bouzerar , Abdelmajid Ainane
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引用次数: 0

Abstract

We investigate the electronic, magnetic, and thermal properties of NiSi2N4, NiGe2N4, and NiSiGeN4 monolayers using DFT, DFT+U, and Monte Carlo simulations. Phonon dispersion calculations and ab initio molecular dynamics confirm their dynamical and thermal stability. All compounds exhibit metallic character with large out-of-plane magnetic anisotropy energies (467.03, 440.49, and 250.44 345 μeV, respectively) and Curie temperatures ranging from 375–405 K, which can be further enhanced to 435–440 K under an external magnetic field. We also explore the impact of carrier doping on their magnetic properties. Remarkably, hole doping drives NiSi2N4, NiGe2N4, and NiSiGeN4 monolayers from the ferromagnetic ground state into an antiferromagnetic order, whereas electron doping increases the critical temperature. These results underscore their promise as robust, room-temperature spintronic materials capable of operating under extreme conditions.

Abstract Image

二维铁磁体NiSi2N4、NiGe2N4和Janus NiSiGeN4的强面外磁各向异性和居里温度升高
我们利用DFT、DFT+U和蒙特卡罗模拟研究了NiSi2N4、NiGe2N4和NiSiGeN4单层的电子、磁性和热性能。声子色散计算和从头算分子动力学证实了它们的动力学和热稳定性。所有化合物均具有较大的面外磁各向异性能(分别为467.03、440.49和250.44 345 μeV)和居里温度(375 ~ 405 K),外加磁场可将居里温度进一步提高到435 ~ 440 K。我们还探讨了载流子掺杂对其磁性能的影响。值得注意的是,空穴掺杂使NiSi2N4、NiGe2N4和NiSiGeN4单层从铁磁基态变为反铁磁有序,而电子掺杂提高了临界温度。这些结果强调了它们作为能够在极端条件下工作的坚固的室温自旋电子材料的前景。
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来源期刊
Materials Chemistry and Physics
Materials Chemistry and Physics 工程技术-材料科学:综合
CiteScore
8.70
自引率
4.30%
发文量
1515
审稿时长
69 days
期刊介绍: Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.
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