{"title":"Strong out-of-plane magnetic anisotropy and elevated Curie temperatures in 2D ferromagnets NiSi2N4, NiGe2N4, and Janus NiSiGeN4","authors":"Lahcen Aznague , Hanane Lahraichi , Zakaryae Haman , Moussa Kibbou , Ismail Essaoudi , Georges Bouzerar , Abdelmajid Ainane","doi":"10.1016/j.matchemphys.2026.132053","DOIUrl":null,"url":null,"abstract":"<div><div>We investigate the electronic, magnetic, and thermal properties of NiSi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>N<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>, NiGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>N<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>, and NiSiGeN<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> monolayers using DFT, <span><math><mrow><mi>D</mi><mi>F</mi><mi>T</mi><mo>+</mo><mi>U</mi></mrow></math></span>, and Monte Carlo simulations. Phonon dispersion calculations and ab initio molecular dynamics confirm their dynamical and thermal stability. All compounds exhibit metallic character with large out-of-plane magnetic anisotropy energies (467.03, 440.49, and 250.44 345 <span><math><mi>μ</mi></math></span>eV, respectively) and Curie temperatures ranging from 375–405 K, which can be further enhanced to 435–440 K under an external magnetic field. We also explore the impact of carrier doping on their magnetic properties. Remarkably, hole doping drives NiSi<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>N<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>, NiGe<span><math><msub><mrow></mrow><mrow><mn>2</mn></mrow></msub></math></span>N<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span>, and NiSiGeN<span><math><msub><mrow></mrow><mrow><mn>4</mn></mrow></msub></math></span> monolayers from the ferromagnetic ground state into an antiferromagnetic order, whereas electron doping increases the critical temperature. These results underscore their promise as robust, room-temperature spintronic materials capable of operating under extreme conditions.</div></div>","PeriodicalId":18227,"journal":{"name":"Materials Chemistry and Physics","volume":"353 ","pages":"Article 132053"},"PeriodicalIF":5.2000,"publicationDate":"2026-04-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Materials Chemistry and Physics","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S0254058426000441","RegionNum":3,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2026/1/14 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
We investigate the electronic, magnetic, and thermal properties of NiSiN, NiGeN, and NiSiGeN monolayers using DFT, , and Monte Carlo simulations. Phonon dispersion calculations and ab initio molecular dynamics confirm their dynamical and thermal stability. All compounds exhibit metallic character with large out-of-plane magnetic anisotropy energies (467.03, 440.49, and 250.44 345 eV, respectively) and Curie temperatures ranging from 375–405 K, which can be further enhanced to 435–440 K under an external magnetic field. We also explore the impact of carrier doping on their magnetic properties. Remarkably, hole doping drives NiSiN, NiGeN, and NiSiGeN monolayers from the ferromagnetic ground state into an antiferromagnetic order, whereas electron doping increases the critical temperature. These results underscore their promise as robust, room-temperature spintronic materials capable of operating under extreme conditions.
期刊介绍:
Materials Chemistry and Physics is devoted to short communications, full-length research papers and feature articles on interrelationships among structure, properties, processing and performance of materials. The Editors welcome manuscripts on thin films, surface and interface science, materials degradation and reliability, metallurgy, semiconductors and optoelectronic materials, fine ceramics, magnetics, superconductors, specialty polymers, nano-materials and composite materials.