Influence of 2 MeV electron irradiation on the band gap of TlGaS2 and TlGaSe2 single crystals

IF 2.8 4区物理与天体物理 Q3 PHYSICS, CONDENSED MATTER

Solid State Communications Pub Date : 2026-02-01 Epub Date: 2025-12-19 DOI:10.1016/j.ssc.2025.116290

S. Kh. Umarov , N.Z. Gasanov , F.К. Khallokov , Z.M. Narzullayeva , A.A. Ahadov

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Abstract

The influence of 2 MeV electron irradiation on the optical band gap of TlGaS₂ and TlGaSe₂ layered single crystals was systematically examined. High-purity crystals were grown using the Bridgman–Stockbarger technique and irradiated with electron fluences up to 1 × 10¹⁶ e/cm². Room-temperature optical absorption spectra were analyzed, and the band gap (

E_{g}

) values were extracted using the Tauc method from the linear regions of (αhν)² versus photon energy. Irradiation was found to induce a measurable widening of the band gap in both compounds: for TlGaS₂,

E_{g}

increased from 2.517 to 2.537 eV, whereas for TlGaSe₂ it increased more significantly, from 2.036 to 2.108 eV. The observed behavior is attributed to irradiation-driven lattice relaxation and a reduction in dislocation density, which together result in slight lattice compression and modifications to the electronic band structure. These results provide new insight into the mechanisms governing radiation-induced changes in layered AIII–BIII–C₂VI semiconductors and highlight the relevance of TlGaS₂ and TlGaSe₂ for radiation-tolerant optoelectronic applications.

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2mev电子辐照对TlGaS2和TlGaS2单晶带隙的影响

系统地研究了2mev电子辐照对TlGaS2和TlGaSe2层状单晶光学带隙的影响。使用Bridgman-Stockbarger技术培养高纯度晶体，并用高达1 × 1016 e/cm2的电子辐照。分析了室温光吸收光谱，利用Tauc方法从（αhν）2与光子能量的线性区域提取了带隙（Eg）值。辐照后，两种化合物的带隙都明显变宽：TlGaS2的Eg从2.517 eV增加到2.537 eV，而TlGaSe2的Eg从2.036 eV增加到2.108 eV。观察到的行为归因于辐照驱动的晶格松弛和位错密度的降低，两者共同导致轻微的晶格压缩和电子能带结构的改变。这些结果为层状AIII-BIII-C2VI半导体中辐射诱导变化的机制提供了新的见解，并强调了TlGaS2和TlGaS2在耐辐射光电应用中的相关性。

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来源期刊

Solid State Communications 物理-物理：凝聚态物理

CiteScore

3.40

自引率

4.80%

发文量

287

审稿时长

51 days

期刊介绍： Solid State Communications is an international medium for the publication of short communications and original research articles on significant developments in condensed matter science, giving scientists immediate access to important, recently completed work. The journal publishes original experimental and theoretical research on the physical and chemical properties of solids and other condensed systems and also on their preparation. The submission of manuscripts reporting research on the basic physics of materials science and devices, as well as of state-of-the-art microstructures and nanostructures, is encouraged. A coherent quantitative treatment emphasizing new physics is expected rather than a simple accumulation of experimental data. Consistent with these aims, the short communications should be kept concise and short, usually not longer than six printed pages. The number of figures and tables should also be kept to a minimum. Solid State Communications now also welcomes original research articles without length restrictions. The Fast-Track section of Solid State Communications is the venue for very rapid publication of short communications on significant developments in condensed matter science. The goal is to offer the broad condensed matter community quick and immediate access to publish recently completed papers in research areas that are rapidly evolving and in which there are developments with great potential impact.