Xiaobo Yu , Zhenyou Li , Yang Bai , Qinghua Zhang , Peng Chen , Hong Zhao , Lin Gu , Qian Zhan
{"title":"Defect-driven polarization reconfiguration in Bi3.15Nd0.85Ti3O12 film","authors":"Xiaobo Yu , Zhenyou Li , Yang Bai , Qinghua Zhang , Peng Chen , Hong Zhao , Lin Gu , Qian Zhan","doi":"10.1016/j.scriptamat.2025.117121","DOIUrl":null,"url":null,"abstract":"<div><div>The physical origin of controlling ferroelectric properties in defect-engineered Aurivillius-phase layered materials lies in the local polarization evolution mediated by structural defects. Nevertheless, the role of widely prevalent out-of-phase boundary (OPB) defects in configuring polarization remains unclear. This study uses Bi<sub>3.15</sub>Nd<sub>0.85</sub>Ti<sub>3</sub>O<sub>12</sub> film, optimized with a HfO<sub>2</sub> buffer layer, as a model system to elucidate the intrinsic mechanism behind the enhanced local polarization within the OPB defect regions. Atomic-scale quantitative analysis reveals that OPB defects enhance the in-plane displacement of B-site cations and co-align their out-of-plane polarization directions within the perovskite layers. This reconfiguration disrupts the intrinsic antipolar ordering by eliminating the antiparallel alignment of out-of-plane dipoles between adjacent pseudo-perovskite blocks in the pristine lattice. Strain and vacancy redistribution further promote the polarization configuration transition by disrupting charge compensation. These findings provide mechanistic insights into defect-modulated ferroelectricity and suggest a new approach for designing high-performance devices through strain and defect engineering.</div></div>","PeriodicalId":423,"journal":{"name":"Scripta Materialia","volume":"274 ","pages":"Article 117121"},"PeriodicalIF":5.9000,"publicationDate":"2026-03-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Scripta Materialia","FirstCategoryId":"88","ListUrlMain":"https://www.sciencedirect.com/science/article/pii/S1359646225005810","RegionNum":2,"RegionCategory":"材料科学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"2025/12/3 0:00:00","PubModel":"Epub","JCR":"Q2","JCRName":"MATERIALS SCIENCE, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
The physical origin of controlling ferroelectric properties in defect-engineered Aurivillius-phase layered materials lies in the local polarization evolution mediated by structural defects. Nevertheless, the role of widely prevalent out-of-phase boundary (OPB) defects in configuring polarization remains unclear. This study uses Bi3.15Nd0.85Ti3O12 film, optimized with a HfO2 buffer layer, as a model system to elucidate the intrinsic mechanism behind the enhanced local polarization within the OPB defect regions. Atomic-scale quantitative analysis reveals that OPB defects enhance the in-plane displacement of B-site cations and co-align their out-of-plane polarization directions within the perovskite layers. This reconfiguration disrupts the intrinsic antipolar ordering by eliminating the antiparallel alignment of out-of-plane dipoles between adjacent pseudo-perovskite blocks in the pristine lattice. Strain and vacancy redistribution further promote the polarization configuration transition by disrupting charge compensation. These findings provide mechanistic insights into defect-modulated ferroelectricity and suggest a new approach for designing high-performance devices through strain and defect engineering.
期刊介绍:
Scripta Materialia is a LETTERS journal of Acta Materialia, providing a forum for the rapid publication of short communications on the relationship between the structure and the properties of inorganic materials. The emphasis is on originality rather than incremental research. Short reports on the development of materials with novel or substantially improved properties are also welcomed. Emphasis is on either the functional or mechanical behavior of metals, ceramics and semiconductors at all length scales.