Jialu Chen, liwei tang, Chen Gong, Linjie Wei, Jingtian Zhang, Xingguang Chen, Xiaoyu Zhang, Yi Liu, Junhua Luo, Zhihua Sun
{"title":"Improper Narrow Bandgap Molecular Ferroelectrics Enable Light-Excited Pyroelectricity for Broadband Self-Powered Photoactivities","authors":"Jialu Chen, liwei tang, Chen Gong, Linjie Wei, Jingtian Zhang, Xingguang Chen, Xiaoyu Zhang, Yi Liu, Junhua Luo, Zhihua Sun","doi":"10.1039/d5qi01797a","DOIUrl":null,"url":null,"abstract":"Narrow bandgap ferroelectrics are emerging as critical components for assembling high-performance optoelectronic devices with broadband spectral response, yet integrating narrow bandgap and robust ferroelectricity in a single-phase material system remains a huge challenge. Herein, we report a narrow bandgap improper molecular ferroelectric, (DMAPA)BiI<small><sub>5</sub></small> (<strong>1</strong>; DMAPA = dimethylaminopropylammonium), which has the band gap of 1.94 eV and spontaneous polarization (<em>P</em><small><sub>s</sub></small>) value of 1.38 µC cm<small><sup>-2</sup></small>. It is notable that <strong>1</strong> exhibits unusual dielectric bistability near its Curie temperature (<em>T</em><small><sub>c</sub></small>) = 372 K, along with only quite small variation in dielectric constants. This characteristic of improper ferroelectricity endows <strong>1</strong> with large pyroelectric figures-of-merit. Strikingly, light-induced change of its electric <em>P</em><small><sub>s</sub></small> leads to ultraviolet-to-near-infrared pyroelectricity in a wide spectral region (266–980 nm), thus achieving broadband self-powered photoactivities. High-quality thin films of <strong>1</strong> fabricated <em>via</em> spin-coating process also exhibit excellent light-induced pyroelectric effects. The integration of photoactivities in narrow bandgap improper ferroelectrics offers a promising pathway toward scalable broadband optoelectronic device application.","PeriodicalId":79,"journal":{"name":"Inorganic Chemistry Frontiers","volume":"66 1","pages":""},"PeriodicalIF":6.4000,"publicationDate":"2025-10-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Inorganic Chemistry Frontiers","FirstCategoryId":"92","ListUrlMain":"https://doi.org/10.1039/d5qi01797a","RegionNum":1,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q1","JCRName":"CHEMISTRY, INORGANIC & NUCLEAR","Score":null,"Total":0}
引用次数: 0
Abstract
Narrow bandgap ferroelectrics are emerging as critical components for assembling high-performance optoelectronic devices with broadband spectral response, yet integrating narrow bandgap and robust ferroelectricity in a single-phase material system remains a huge challenge. Herein, we report a narrow bandgap improper molecular ferroelectric, (DMAPA)BiI5 (1; DMAPA = dimethylaminopropylammonium), which has the band gap of 1.94 eV and spontaneous polarization (Ps) value of 1.38 µC cm-2. It is notable that 1 exhibits unusual dielectric bistability near its Curie temperature (Tc) = 372 K, along with only quite small variation in dielectric constants. This characteristic of improper ferroelectricity endows 1 with large pyroelectric figures-of-merit. Strikingly, light-induced change of its electric Ps leads to ultraviolet-to-near-infrared pyroelectricity in a wide spectral region (266–980 nm), thus achieving broadband self-powered photoactivities. High-quality thin films of 1 fabricated via spin-coating process also exhibit excellent light-induced pyroelectric effects. The integration of photoactivities in narrow bandgap improper ferroelectrics offers a promising pathway toward scalable broadband optoelectronic device application.