Voltage fluctuations in a four-terminal quantum device with orthogonal, unitary or symplectic symmetry

IF 2.5 3区 物理与天体物理 Q3 NANOSCIENCE & NANOTECHNOLOGY
F. Castañeda-Ramírez , M. Martínez-Mares , A.M. Martínez-Argüello
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引用次数: 0

Abstract

The statistical fluctuations of the voltage across a quantum wire in a four-terminal arrangement, where two of the terminals are used as probes while the other two are used to establish a flux current, is studied in the single channel case. The quantum wire to be measured consists of a chaotic microcavity or a disordered conductor in the presence of one of the three symmetry classes: orthogonal, unitary, or symplectic. Using the circular ensembles of random matrix theory or the Dorokov–Mello–Pereyra–Kumar (DMPK) equation, the statistical distribution of the voltage is reduced to quadratures for noninvasive probes which is solved numerically. Numerical simulations from random matrix theory or for the DMPK equation are performed for any coupling strength of the probes. For the chaotic cavity the effect of the symmetry class is clearly manifested through the weak and weak anti-localization phenomena for the orthogonal and symplectic symmetry classes, respectively. A similar effect is found, but with respect to the degree of disorder in a quantum wire as it evolves from strong to weak disorder: a simple correspondence between the label of the symmetry class and the degree of disorder, is found.
正交对称、酉对称或辛对称的四端量子器件中的电压波动
在单通道情况下,研究了四端排列中电压的统计波动,其中两个终端用作探针,而另外两个用于建立磁通电流。要测量的量子线由一个混沌微腔或无序导体组成,其中存在三种对称类:正交、酉或辛。利用随机矩阵理论的圆系综或Dorokov-Mello-Pereyra-Kumar (DMPK)方程,将无创探头的电压统计分布简化为正交分布,并进行数值求解。利用随机矩阵理论或DMPK方程对任意耦合强度的探针进行了数值模拟。对于混沌腔,对称类的影响通过正交对称类和辛对称类的弱和弱反局域化现象清晰地表现出来。发现了类似的效应,但是是关于量子线从强无序到弱无序的程度:发现了对称类的标签和无序程度之间的简单对应关系。
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来源期刊
CiteScore
7.30
自引率
6.10%
发文量
356
审稿时长
65 days
期刊介绍: Physica E: Low-dimensional systems and nanostructures contains papers and invited review articles on the fundamental and applied aspects of physics in low-dimensional electron systems, in semiconductor heterostructures, oxide interfaces, quantum wells and superlattices, quantum wires and dots, novel quantum states of matter such as topological insulators, and Weyl semimetals. Both theoretical and experimental contributions are invited. Topics suitable for publication in this journal include spin related phenomena, optical and transport properties, many-body effects, integer and fractional quantum Hall effects, quantum spin Hall effect, single electron effects and devices, Majorana fermions, and other novel phenomena. Keywords: • topological insulators/superconductors, majorana fermions, Wyel semimetals; • quantum and neuromorphic computing/quantum information physics and devices based on low dimensional systems; • layered superconductivity, low dimensional systems with superconducting proximity effect; • 2D materials such as transition metal dichalcogenides; • oxide heterostructures including ZnO, SrTiO3 etc; • carbon nanostructures (graphene, carbon nanotubes, diamond NV center, etc.) • quantum wells and superlattices; • quantum Hall effect, quantum spin Hall effect, quantum anomalous Hall effect; • optical- and phonons-related phenomena; • magnetic-semiconductor structures; • charge/spin-, magnon-, skyrmion-, Cooper pair- and majorana fermion- transport and tunneling; • ultra-fast nonlinear optical phenomena; • novel devices and applications (such as high performance sensor, solar cell, etc); • novel growth and fabrication techniques for nanostructures
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