Ion migration and interface engineering in emerging halide perovskite technologies for enhanced stability, mobility, and device optimization in FETs and memory devices

Abstract

Incorporating halide perovskites (HPs) into electronic devices has drawn substantial attention for their exceptional optoelectronic properties, tunable bandgap, high carrier mobility, and solution-processing capabilities, and they are promising candidates for field-effect transistors (FETs) and resistive switching (RS) memory devices. However, their promise is tempered by environmental sensitivity, hysteresis, and ion-migration-induced degradation, which continue to pose barriers to commercialization. Addressing these issues via refined compositional engineering, robust passivation strategies, and the hybrid incorporation of complementary materials is crucial for enhancing device performance and durability. Continual synergy among material innovation, device engineering, and theoretical modeling is predicted to significantly expedite the broader uptake of HPs in high-performance, energy-efficient electronic systems.