Bottom-Up Synthesized Carbon Nitride Quantum Dots-Based Light-Emitting Diode

IF 6.4 1区化学 Q1 CHEMISTRY, INORGANIC & NUCLEAR

Inorganic Chemistry Frontiers Pub Date : 2025-10-11 DOI:10.1039/d5qi01479d

Xinyi Wang, Bingjie Li, Yingqin Xu, Mingming Zhang, Fangxu Dai, Qiang Cao, Lei Wang, Jun Xing

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Abstract

Carbon nitride quantum dots (CNQDs) represent an emerging class of polymeric semiconductor nanomaterial that combines environmental friendliness with facile synthesis, solution-processability and tunable optoelectronic properties. Despite these advantages, their application in optoelectronics devices remains largely unexplored. Here we demonstrate a high-performance light-emitting diodes (LEDs) employing thermally polymerized CNQDs as the emissive layer. The synthesized CNQDs exhibit uniform size distribution, long-term colloidal stability, and a remarkable photoluminescence quantum yield. Detailed charge transport analysis reveals matched electron-hole mobility of CNQDs, enabling efficient radiative recombination. The optimized CNQDs-LED architecture achieves breakthrough performance metrics: a low turn-on voltage of 2.8 V, maximum luminance of 885 cd m-2, and record external quantum efficiency of 2.14%. This study not only establishes CNQDs as viable alternatives to conventional heavy-metal QDs but also provides a general framework for developing sustainable optoelectronic materials, paving the way for environmentally benign display technologies.

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自底向上合成氮化碳量子点发光二极管

氮化碳量子点（CNQDs）是一类新兴的聚合物半导体纳米材料，具有环境友好性、易于合成、溶液可加工性和可调谐光电性能。尽管有这些优点，它们在光电子器件中的应用在很大程度上仍未被探索。在这里，我们展示了一种采用热聚合CNQDs作为发射层的高性能发光二极管（led）。合成的CNQDs具有均匀的尺寸分布、长期的胶体稳定性和显著的光致发光量子产率。详细的电荷输运分析揭示了CNQDs的电子-空穴迁移率匹配，实现了高效的辐射复合。优化后的CNQDs-LED架构实现了突破性的性能指标：低导通电压为2.8 V，最大亮度为885 cd m-2，记录外量子效率为2.14%。这项研究不仅确立了CNQDs作为传统重金属QDs的可行替代品，而且为开发可持续光电材料提供了一个总体框架，为环境友好的显示技术铺平了道路。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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