Charge Losses in SiC and Si Detectors at Registration of Heavy Ions

Abstract

The results of measurements of charge losses at registration of xenon ions (\({}^{132}\)Xe) with the energies of 44.5, 81.5 and 165 MeV in the detectors based on silicon carbide (SiC) and silicon (Si) are presented. The measured values of the amplitude defect for SiC and Si detectors are 43 and 21\(\%\) of the true \({}^{132}\)Xe ion energy, respectively. The reason is the incomplete collection of charge carriers due to their recombination in a dense track of the heavy ion being detected.