A Study on a Novel Photothermal without Energy Dissipation Model in Semiconductor Materials

Abstract

This study investigates the photothermoelastic analysis of a semiconductor medium under fully coupled of Green–Naghdi’s (GNII) theory without energy dissipation. Closed-form exact solutions are derived for the physical quantities due to an exponentially decaying heat pulse at the surface. The analysis employs Laplace transform with the eigenvalue technique to obtain explicit solutions for all variables. Numerical results are provided to evaluate the proposed methodology in a simplified semiconductor geometry. The findings are discussed in detail, offering insights into the thermoelastic behavior of the medium under thermal excitation.