A comparative density functional theory (DFT) investigation of the structural and opto-electronic properties of Zn-doped CuAlS2 chalcopyrite and (Cu, Al) co-doped ZnS compound using the modified Becke-Johnson (mBJ)

IF 3.9 Q3 PHYSICS, CONDENSED MATTER
H. Hedjar , A. Boukortt
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引用次数: 0

Abstract

In, this work, we have developed a comparative study of the structural and opto-electronic properties of Zn doped CuAlS2 chalcopyrite and (Cu, Al) co-doped ZnS compound using the first principles calculation based on density functional theory (DFT) and FP-LAPW method. The exchange and correlation effects are treated by the Perdew– Burke–Ernzerhof generalized gradient approximation (GGA). Additionally, we used the modified Becke-Johnson (mBJ). The structural parameters found to be increase by Zn doping chalcopyrite and decreased by (Cu, Al) co-doping ZnS compound. The calculated band structure, the total and partial densities of states (TDOS and PDOS) show the semiconducting character of all systems with a direct band gap with a noticed decrease in its value by Zn doping CuAlS2 and (Cu, Al) co-doping ZnS. The optical properties such as the real and imaginary parts of the dielectric function and the absorption coefficient, the refractive index, the extinction coefficient and the optical conductivity are calculated and presented. The calculated optical properties found to be more interesting in the visible region. The presence of Cu, Al and Zn together may enhance the optical properties in the IR region. This comparative analysis is a significant advancement over previous standalone studies. As far as we are aware, no theorical publications have been written about the electronic and optical properties of Cu, Al co-doped ZnS compound using GGA and GGA + mBJ.
用修饰的Becke-Johnson (mBJ)比较密度泛函理论(DFT)研究了掺杂zn的CuAlS2黄铜矿和(Cu, Al)共掺杂ZnS化合物的结构和光电性质
本文采用基于密度泛函理论(DFT)和FP-LAPW方法的第一性原理计算方法,对Zn掺杂CuAlS2黄铜矿和(Cu, Al)共掺杂ZnS化合物的结构和光电性能进行了比较研究。交换效应和相关效应由Perdew - Burke-Ernzerhof广义梯度近似(GGA)处理。此外,我们使用了改良的Becke-Johnson (mBJ)。发现锌掺杂黄铜矿后结构参数增加,(Cu, Al)共掺杂ZnS化合物后结构参数降低。计算得到的能带结构、总态密度和部分态密度(TDOS和PDOS)均具有半导体性质,且直接带隙明显减小,且Zn掺杂CuAlS2和(Cu, Al)共掺杂ZnS的带隙值明显减小。计算并给出了介电函数的实部和虚部、吸收系数、折射率、消光系数和光电导率等光学性质。计算出的光学性质发现在可见光区域更有趣。Cu、Al和Zn的共同存在可以增强材料在红外区的光学性能。这种比较分析是以往独立研究的重大进步。据我们所知,目前还没有关于GGA和GGA + mBJ对Cu, Al共掺杂ZnS化合物的电子和光学性质的理论论文。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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来源期刊
Computational Condensed Matter
Computational Condensed Matter PHYSICS, CONDENSED MATTER-
CiteScore
3.70
自引率
9.50%
发文量
134
审稿时长
39 days
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