{"title":"Influence of Radial Deformation and Gate Oxide Layer on Electrical Transport in Carbon Nanotube Field-Effect Transistors","authors":"Xiao-Yan Hu, , , Kun-Zi Han, , , Shuai Liu, , , De-Huan Meng, , , Hui-Jin Li, , , Wei-Ping Wang, , , Yu-Hang Zhao, , , Tao Chu*, , , Yang Yang*, , and , Dong-Bo Zhang*, ","doi":"10.1021/acs.jpcc.5c02720","DOIUrl":null,"url":null,"abstract":"<p >Carbon nanotube field-effect transistors (CNTFETs) have emerged as a promising alternative to silicon-based devices for next-generation integrated circuits. Using the lattice nonequilibrium Green’s function method, we conduct multiscale modeling of CNTFETs to investigate how radial deformation and gate oxide layer properties influence interface conductance and device performance. Our simulations demonstrate that radial compression of carbon nanotubes (CNTs) enhances current flow at the CNT/gate oxide interface but reduces the transistor’s switching current ratio. Conversely, a thin gate oxide layer with high dielectric constant significantly improves the switching current ratio. These findings provide insights for optimizing the electrical characteristics and switching behavior of CNTFETs through structural engineering.</p>","PeriodicalId":61,"journal":{"name":"The Journal of Physical Chemistry C","volume":"129 40","pages":"18164–18171"},"PeriodicalIF":3.2000,"publicationDate":"2025-09-29","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"The Journal of Physical Chemistry C","FirstCategoryId":"1","ListUrlMain":"https://pubs.acs.org/doi/10.1021/acs.jpcc.5c02720","RegionNum":3,"RegionCategory":"化学","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q2","JCRName":"CHEMISTRY, PHYSICAL","Score":null,"Total":0}
引用次数: 0
Abstract
Carbon nanotube field-effect transistors (CNTFETs) have emerged as a promising alternative to silicon-based devices for next-generation integrated circuits. Using the lattice nonequilibrium Green’s function method, we conduct multiscale modeling of CNTFETs to investigate how radial deformation and gate oxide layer properties influence interface conductance and device performance. Our simulations demonstrate that radial compression of carbon nanotubes (CNTs) enhances current flow at the CNT/gate oxide interface but reduces the transistor’s switching current ratio. Conversely, a thin gate oxide layer with high dielectric constant significantly improves the switching current ratio. These findings provide insights for optimizing the electrical characteristics and switching behavior of CNTFETs through structural engineering.
期刊介绍:
The Journal of Physical Chemistry A/B/C is devoted to reporting new and original experimental and theoretical basic research of interest to physical chemists, biophysical chemists, and chemical physicists.