S. Bahareh Seyedein Ardebili, Behnam Zeinalvand Farzin, Jong Su Kim, Sang Jun Lee
{"title":"Comparative analysis of InAsP and InGaAs photodetectors for SWIR applications: photoreflectance approach and simulations","authors":"S. Bahareh Seyedein Ardebili, Behnam Zeinalvand Farzin, Jong Su Kim, Sang Jun Lee","doi":"10.1007/s40042-025-01321-w","DOIUrl":null,"url":null,"abstract":"<div><p>This study investigates the performance of InGaAs and InAsP photodetectors in the short-wave infrared spectrum using photoreflectance spectroscopy and computational simulations. InAsP photodetectors with p-i-n homojunction structures grown on InP substrates exhibited higher quantum efficiency than their InGaAs counterparts. Photoreflectance spectroscopy, a contactless characterization technique, revealed a 38% higher quantum efficiency for InAsP photodetectors, attributable to longer carrier lifetimes and enhanced crystalline quality. Simulations validated these findings, linking the improved performance to reduced surface states and recombination rates in InAsP materials. Key insights from this work highlight the role of material properties, such as recombination mechanisms and capacitance, in influencing photodetector performance, emphasizing the potential of InAsP for advanced SWIR applications.</p></div>","PeriodicalId":677,"journal":{"name":"Journal of the Korean Physical Society","volume":"86 12","pages":"1148 - 1156"},"PeriodicalIF":0.9000,"publicationDate":"2025-03-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Journal of the Korean Physical Society","FirstCategoryId":"101","ListUrlMain":"https://link.springer.com/article/10.1007/s40042-025-01321-w","RegionNum":4,"RegionCategory":"物理与天体物理","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"Q3","JCRName":"PHYSICS, MULTIDISCIPLINARY","Score":null,"Total":0}
引用次数: 0
Abstract
This study investigates the performance of InGaAs and InAsP photodetectors in the short-wave infrared spectrum using photoreflectance spectroscopy and computational simulations. InAsP photodetectors with p-i-n homojunction structures grown on InP substrates exhibited higher quantum efficiency than their InGaAs counterparts. Photoreflectance spectroscopy, a contactless characterization technique, revealed a 38% higher quantum efficiency for InAsP photodetectors, attributable to longer carrier lifetimes and enhanced crystalline quality. Simulations validated these findings, linking the improved performance to reduced surface states and recombination rates in InAsP materials. Key insights from this work highlight the role of material properties, such as recombination mechanisms and capacitance, in influencing photodetector performance, emphasizing the potential of InAsP for advanced SWIR applications.
期刊介绍:
The Journal of the Korean Physical Society (JKPS) covers all fields of physics spanning from statistical physics and condensed matter physics to particle physics. The manuscript to be published in JKPS is required to hold the originality, significance, and recent completeness. The journal is composed of Full paper, Letters, and Brief sections. In addition, featured articles with outstanding results are selected by the Editorial board and introduced in the online version. For emphasis on aspect of international journal, several world-distinguished researchers join the Editorial board. High quality of papers may be express-published when it is recommended or requested.