X-Ray Certification of Si, Ge, LaB6, and InSb Single Crystals

Abstract

We report an X-ray certification of a series of new X-ray standard (Si, Ge, LaB₆, InSb) in the form of 20-50 µm large perfect high-purity single crystals. The unit cell parameters of the studied single crystals are measured using a Si single crystal (a = 5.431042 Å) as an external reference that was earlier studied on a single-crystal spectrometer using Bond′s scheme. It is shown that the relative accuracy of the obtained cubic unit cell parameters Δa/a is at least 5·10^–5 provided that eccentricity was taken into account properly. The cubic unit cell parameter of the Y₂O₃ single crystal is refined using Ge and InSb standards.