Modeling and Experimental Study of Black Silicon Angular Reflection

Abstract

We present the results of angular reflection analysis of black silicon (b-Si) layers formed by reactive ion etching. Calculations using the transfer matrix method and experimental measurements confirm the excellent antireflective properties of b-Si at light incidence angles of up to 60°. This ensures the stability of the short-circuit current in solar cells across a wide angular range, which is particularly important for the efficient operation of stationary photovoltaic stations during daytime and under cloudy conditions.